P8806BM Specs and Replacement
Type Designator: P8806BM
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.78 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 38 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.088 Ohm
Package: SOT-23
P8806BM substitution
P8806BM datasheet
Detailed specifications: P5510EK , P5515BD , P5515BK , P5515BV , P7510ED , P7510EEU , P7510EK , P8010HK , IRF640N , P9006EDA , P9006EVA , P9515BD , PA010BV , PA110BEA , PA110ED , PA110HEA , PA110NK .
History: P8010HK
Keywords - P8806BM MOSFET specs
P8806BM cross reference
P8806BM equivalent finder
P8806BM pdf lookup
P8806BM substitution
P8806BM replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
