All MOSFET. P8806BM Datasheet

 

P8806BM Datasheet and Replacement


   Type Designator: P8806BM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.78 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 38 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.088 Ohm
   Package: SOT-23
 

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P8806BM Datasheet (PDF)

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P8806BM

N-Channel Enhancement Mode Field P8806BM NIKO-SEM Effect Transistor SOT-23 Halogen-Free & Lead-Free PRODUCT SUMMARY D V(BR)DSS RDS(ON) ID 60V 88m 2A G. GATE GD. DRAIN S. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V TC = 25

Datasheet: P5510EK , P5515BD , P5515BK , P5515BV , P7510ED , P7510EEU , P7510EK , P8010HK , IRF630 , P9006EDA , P9006EVA , P9515BD , PA010BV , PA110BEA , PA110ED , PA110HEA , PA110NK .

History: HGS098N10SL | KPA1792 | AP3990S | YJG90G10A | CS6N70F | BUK9K18-40E | STN3414

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