PA010BV Datasheet. Specs and Replacement

Type Designator: PA010BV  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: SOP-8

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PA010BV datasheet

 ..1. Size:289K  niko-sem
 pa010bv.pdf pdf_icon

PA010BV

PA010BV N-Channel Enhancement Mode NIKO-SEM SOP-8 Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID G 100V 100m 3A G GATE D DRAIN S SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V TA = 25... See More ⇒

 9.1. Size:781K  unikc
 pa010hk.pdf pdf_icon

PA010BV

PA010HK Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100m @VGS = 10V 100V 9.1A PDFN 5*6P ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage 20 TC = 25 C 9.1 ID Continuous Drain Current TC = 100 C 5.7 IDM 25 Pulsed Drai... See More ⇒

Detailed specifications: P7510ED, P7510EEU, P7510EK, P8010HK, P8806BM, P9006EDA, P9006EVA, P9515BD, 8205A, PA110BEA, PA110ED, PA110HEA, PA110NK, PA110NV, PA410BTF, PA515BD, PA520BA

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