All MOSFET. PA010BV Datasheet

 

PA010BV Datasheet and Replacement


   Type Designator: PA010BV
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: SOP-8
 

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PA010BV Datasheet (PDF)

 ..1. Size:289K  niko-sem
 pa010bv.pdf pdf_icon

PA010BV

PA010BV N-Channel Enhancement Mode NIKO-SEM SOP-8 Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G100V 100m 3A G: GATE D: DRAIN S: SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V TA = 25

 9.1. Size:781K  unikc
 pa010hk.pdf pdf_icon

PA010BV

PA010HKDual N-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID100m @VGS = 10V100V 9.1APDFN 5*6PABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 100VVGSGate-Source Voltage 20TC = 25 C9.1IDContinuous Drain CurrentTC = 100 C5.7IDM25Pulsed Drai

Datasheet: P7510ED , P7510EEU , P7510EK , P8010HK , P8806BM , P9006EDA , P9006EVA , P9515BD , P55NF06 , PA110BEA , PA110ED , PA110HEA , PA110NK , PA110NV , PA410BTF , PA515BD , PA520BA .

History: IRF8113PBF | RJK0323JPD | ATM8N80TF | SSM6J53FE | PMN25EN | FDFS6N303 | IPB80N04S3-06

Keywords - PA010BV MOSFET datasheet

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