PA515BD Datasheet. Specs and Replacement

Type Designator: PA515BD  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 44 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 73 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm

Package: TO-252

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PA515BD datasheet

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PA515BD

N-Channel Enhancement Mode PA515BD NIKO-SEM Field Effect Transistor TO-252 Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID G 150V 150m 11A 1. GATE 2. DRAIN 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS 20 V TC = 25 C 11 Continuous Drain Curr... See More ⇒

Detailed specifications: P9515BD, PA010BV, PA110BEA, PA110ED, PA110HEA, PA110NK, PA110NV, PA410BTF, 7N65, PA520BA, PA567EA, PA567JA, PA597BA, PA5D8EA, PA5D8JA, PA5S6EA, PA5S6JA

Keywords - PA515BD MOSFET specs

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