PA515BD Specs and Replacement
Type Designator: PA515BD
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 44 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 73 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
Package: TO-252
PA515BD substitution
PA515BD datasheet
pa515bd.pdf
N-Channel Enhancement Mode PA515BD NIKO-SEM Field Effect Transistor TO-252 Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID G 150V 150m 11A 1. GATE 2. DRAIN 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS 20 V TC = 25 C 11 Continuous Drain Curr... See More ⇒
Detailed specifications: P9515BD , PA010BV , PA110BEA , PA110ED , PA110HEA , PA110NK , PA110NV , PA410BTF , 7N65 , PA520BA , PA567EA , PA567JA , PA597BA , PA5D8EA , PA5D8JA , PA5S6EA , PA5S6JA .
Keywords - PA515BD MOSFET specs
PA515BD cross reference
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PA515BD substitution
PA515BD replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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