All MOSFET. PA515BD Datasheet

 

PA515BD Datasheet and Replacement


   Type Designator: PA515BD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 44 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 73 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: TO-252
 

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PA515BD Datasheet (PDF)

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PA515BD

N-Channel Enhancement Mode PA515BD NIKO-SEM Field Effect Transistor TO-252 Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G150V 150m 11A 1. GATE 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS 20 V TC = 25 C 11 Continuous Drain Curr

Datasheet: P9515BD , PA010BV , PA110BEA , PA110ED , PA110HEA , PA110NK , PA110NV , PA410BTF , STP75NF75 , PA520BA , PA567EA , PA567JA , PA597BA , PA5D8EA , PA5D8JA , PA5S6EA , PA5S6JA .

History: 2N90L-TM3-T | STB12N120K5

Keywords - PA515BD MOSFET datasheet

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