All MOSFET. PA567EA Datasheet

 

PA567EA Datasheet and Replacement


   Type Designator: PA567EA
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.41 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 0.68 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 18 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.52 Ohm
   Package: SOT-23-6
 

 PA567EA substitution

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PA567EA Datasheet (PDF)

 ..1. Size:260K  niko-sem
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PA567EA

P-Channel Enhancement Mode PA567EA NIKO-SEM SOT-23-6 Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -20V 520m -0.68A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. ESD Protecti

 9.1. Size:268K  niko-sem
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PA567EA

Dual P-Channel Logic Level PA567JA NIKO-SEM Enhancement Mode Field Effect SOT-23-6 Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -20V 520m -0.68A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses.

Datasheet: PA110BEA , PA110ED , PA110HEA , PA110NK , PA110NV , PA410BTF , PA515BD , PA520BA , 7N65 , PA567JA , PA597BA , PA5D8EA , PA5D8JA , PA5S6EA , PA5S6JA , PA607UA , PA710ED .

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