PB502CW Datasheet and Replacement
Type Designator: PB502CW
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pd ⓘ - Maximum Power Dissipation: 1.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 3.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 33 nS
Cossⓘ - Output Capacitance: 82 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: PDFN2X2S
PB502CW substitution
PB502CW Datasheet (PDF)
pb502cw.pdf

N- & P-Channel Enhancement Mode Field PB502CW NIKO-SEM PDFN 2x2S Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID N-Channel 20V 30m 6A P-Channel -20V 75m -3.8A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize
Datasheet: PA5D8EA , PA5D8JA , PA5S6EA , PA5S6JA , PA607UA , PA710ED , PA910BC , PA910BM , 8205A , PB5A2BX , PB5A3JW , PB5B5BX , PB5C5JW , PB5G8JW , PB600BX , PB606BX , PB6C4JU .
History: BUK625R0-40C | IRF1405ZS | HMS7N65I | SM4913TSK
Keywords - PB502CW MOSFET datasheet
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History: BUK625R0-40C | IRF1405ZS | HMS7N65I | SM4913TSK



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