All MOSFET. PB502CW Datasheet

 

PB502CW Datasheet and Replacement


   Type Designator: PB502CW
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 3.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 82 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: PDFN2X2S
 

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PB502CW Datasheet (PDF)

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PB502CW

N- & P-Channel Enhancement Mode Field PB502CW NIKO-SEM PDFN 2x2S Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID N-Channel 20V 30m 6A P-Channel -20V 75m -3.8A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize

Datasheet: PA5D8EA , PA5D8JA , PA5S6EA , PA5S6JA , PA607UA , PA710ED , PA910BC , PA910BM , 8205A , PB5A2BX , PB5A3JW , PB5B5BX , PB5C5JW , PB5G8JW , PB600BX , PB606BX , PB6C4JU .

History: IPA60R380P6 | SUD50N03-12P | SSM5P05FU | BSC010N04LSI | 7N65KL-TM3-T | SSM6J207FE | ME6980ED-G

Keywords - PB502CW MOSFET datasheet

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