PB5B5BX Datasheet. Specs and Replacement

Type Designator: PB5B5BX  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 7.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 188 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: PDFN2X2S

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PB5B5BX datasheet

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PB5B5BX

P-Channel Enhancement Mode PB5B5BX NIKO-SEM Field Effect Transistor PDFN 2x2S Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -20V 22m -7.9A G G GATE D DRAIN S SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS 12 V... See More ⇒

Detailed specifications: PA5S6JA, PA607UA, PA710ED, PA910BC, PA910BM, PB502CW, PB5A2BX, PB5A3JW, IRLB4132, PB5C5JW, PB5G8JW, PB600BX, PB606BX, PB6C4JU, PB6D2BX, PB6W8BX, PC015BDA

Keywords - PB5B5BX MOSFET specs

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