PB5G8JW Datasheet. Specs and Replacement

Type Designator: PB5G8JW  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 82 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm

Package: PDFN2X2S

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PB5G8JW datasheet

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PB5G8JW

Dual N-Channel Enhancement PB5G8JW NIKO-SEM PDFN 2x2S Mode Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20V 35m 5A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. Products Int... See More ⇒

Detailed specifications: PA710ED, PA910BC, PA910BM, PB502CW, PB5A2BX, PB5A3JW, PB5B5BX, PB5C5JW, SPP20N60C3, PB600BX, PB606BX, PB6C4JU, PB6D2BX, PB6W8BX, PC015BDA, PC015HVA, PC561BA

Keywords - PB5G8JW MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.