All MOSFET. PB5G8JW Datasheet

 

PB5G8JW Datasheet and Replacement


   Type Designator: PB5G8JW
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 82 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: PDFN2X2S
 

 PB5G8JW substitution

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PB5G8JW Datasheet (PDF)

 ..1. Size:355K  niko-sem
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PB5G8JW

Dual N-Channel Enhancement PB5G8JW NIKO-SEM PDFN 2x2S Mode Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20V 35m 5A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. Products Int

Datasheet: PA710ED , PA910BC , PA910BM , PB502CW , PB5A2BX , PB5A3JW , PB5B5BX , PB5C5JW , TK10A60D , PB600BX , PB606BX , PB6C4JU , PB6D2BX , PB6W8BX , PC015BDA , PC015HVA , PC561BA .

History: OSG70R1K4FF | PMZ320UPE | IXTA4N150HV | SLD60R380S2

Keywords - PB5G8JW MOSFET datasheet

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