PB5G8JW Specs and Replacement
Type Designator: PB5G8JW
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 82 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: PDFN2X2S
PB5G8JW substitution
PB5G8JW datasheet
pb5g8jw.pdf
Dual N-Channel Enhancement PB5G8JW NIKO-SEM PDFN 2x2S Mode Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20V 35m 5A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. Products Int... See More ⇒
Detailed specifications: PA710ED , PA910BC , PA910BM , PB502CW , PB5A2BX , PB5A3JW , PB5B5BX , PB5C5JW , 13N50 , PB600BX , PB606BX , PB6C4JU , PB6D2BX , PB6W8BX , PC015BDA , PC015HVA , PC561BA .
History: PA910BC
Keywords - PB5G8JW MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: PA910BC
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