All MOSFET. PB5G8JW Datasheet

 

PB5G8JW MOSFET. Datasheet pdf. Equivalent


   Type Designator: PB5G8JW
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 4.3 nC
   trⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 82 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: PDFN2X2S

 PB5G8JW Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PB5G8JW Datasheet (PDF)

 ..1. Size:355K  niko-sem
 pb5g8jw.pdf

PB5G8JW PB5G8JW

Dual N-Channel Enhancement PB5G8JW NIKO-SEM PDFN 2x2S Mode Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20V 35m 5A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. Products Int

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: SFS9540

 

 
Back to Top