PB6C4JU Datasheet. Specs and Replacement

Type Designator: PB6C4JU  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 111 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0195 Ohm

Package: TDFN2X3-6

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PB6C4JU datasheet

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PB6C4JU

Dual N-Channel Enhancement Mode PB6C4JU NIKO-SEM TDFN 2x3-6 Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20V 19.5m 7A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. Products ... See More ⇒

Detailed specifications: PB502CW, PB5A2BX, PB5A3JW, PB5B5BX, PB5C5JW, PB5G8JW, PB600BX, PB606BX, 20N50, PB6D2BX, PB6W8BX, PC015BDA, PC015HVA, PC561BA, PD515BA, PD551BA, PD5B3BA

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