All MOSFET. PB6C4JU Datasheet

 

PB6C4JU Datasheet and Replacement


   Type Designator: PB6C4JU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 111 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0195 Ohm
   Package: TDFN2X3-6
 

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PB6C4JU Datasheet (PDF)

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PB6C4JU

Dual N-Channel Enhancement Mode PB6C4JU NIKO-SEM TDFN 2x3-6 Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20V 19.5m 7A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. Products

Datasheet: PB502CW , PB5A2BX , PB5A3JW , PB5B5BX , PB5C5JW , PB5G8JW , PB600BX , PB606BX , 4435 , PB6D2BX , PB6W8BX , PC015BDA , PC015HVA , PC561BA , PD515BA , PD551BA , PD5B3BA .

History: 2N65L-TF3T-T | AM40N04-30DE | 2N2608 | SSM6J207FE | NVR4003N | SUD19N20-90 | ME9435A

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