PB6C4JU Specs and Replacement
Type Designator: PB6C4JU
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 111 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0195 Ohm
Package: TDFN2X3-6
PB6C4JU substitution
PB6C4JU datasheet
pb6c4ju.pdf
Dual N-Channel Enhancement Mode PB6C4JU NIKO-SEM TDFN 2x3-6 Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20V 19.5m 7A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. Products ... See More ⇒
Detailed specifications: PB502CW , PB5A2BX , PB5A3JW , PB5B5BX , PB5C5JW , PB5G8JW , PB600BX , PB606BX , 5N65 , PB6D2BX , PB6W8BX , PC015BDA , PC015HVA , PC561BA , PD515BA , PD551BA , PD5B3BA .
Keywords - PB6C4JU MOSFET specs
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