All MOSFET. PD5B9BA Datasheet

 

PD5B9BA Datasheet and Replacement


   Type Designator: PD5B9BA
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 116 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 37 nS
   Cossⓘ - Output Capacitance: 1038 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: TO-252
 

 PD5B9BA substitution

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PD5B9BA Datasheet (PDF)

 ..1. Size:209K  niko-sem
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PD5B9BA

P-Channel Enhancement Mode PD5B9BANIKO-SEM TO-252Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID2 -30V 4.5m -116A DGFeatures Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. S Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. Application

Datasheet: PB6D2BX , PB6W8BX , PC015BDA , PC015HVA , PC561BA , PD515BA , PD551BA , PD5B3BA , IRF1407 , PD5C1BA , PD5C9BA , PD5E8BA , PD5G3EA , PD5P8BA , PD600BA , PD601CX , PD606BA .

History: AONS66917T | TTD100N04AT | IRFR5305TRPBF

Keywords - PD5B9BA MOSFET datasheet

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