All MOSFET. PD5C1BA Datasheet

 

PD5C1BA Datasheet and Replacement


   Type Designator: PD5C1BA
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 93 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 91 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 49 nS
   Cossⓘ - Output Capacitance: 830 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0056 Ohm
   Package: TO-252
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PD5C1BA Datasheet (PDF)

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PD5C1BA

P-Channel Enhancement Mode PD5C1BA NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -40V 5.6m -91A DGFeatures Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. S Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. Application

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: MMFT60R380PCTH | GSM3413 | FC6B22090L | BSC042NE7NS3G | 13N60A | MP10N50EI | SIHFPC40

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