All MOSFET. PD5E8BA Datasheet

 

PD5E8BA Datasheet and Replacement


   Type Designator: PD5E8BA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 56 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: TO-252
 

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PD5E8BA Datasheet (PDF)

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PD5E8BA

N-Channel Enhancement Mode PD5E8BA NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G30V 45m 16A 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 V TC = 25

Datasheet: PC015HVA , PC561BA , PD515BA , PD551BA , PD5B3BA , PD5B9BA , PD5C1BA , PD5C9BA , 18N50 , PD5G3EA , PD5P8BA , PD600BA , PD601CX , PD606BA , PD608BA , PD609CX , PD616BA .

History: AP4527GH | AUIRL2910S | MME70R380PRH | IRFP440R | CS12N65FA9R | 25N10L-TF3-T | QS8M51

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