PD5G3EA Specs and Replacement
Type Designator: PD5G3EA
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 89 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 81 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 92 nS
Cossⓘ - Output Capacitance: 800 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: TO-252
PD5G3EA substitution
PD5G3EA datasheet
pd5g3ea.pdf
P-Channel Enhancement Mode PD5G3EA NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -30V 8m -81A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. Products Integrate... See More ⇒
Detailed specifications: PC561BA , PD515BA , PD551BA , PD5B3BA , PD5B9BA , PD5C1BA , PD5C9BA , PD5E8BA , 4N60 , PD5P8BA , PD600BA , PD601CX , PD606BA , PD608BA , PD609CX , PD616BA , PD618BA .
Keywords - PD5G3EA MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
