All MOSFET. PD5G3EA Datasheet

 

PD5G3EA Datasheet and Replacement


   Type Designator: PD5G3EA
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 89 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 81 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 92 nS
   Cossⓘ - Output Capacitance: 800 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO-252
 

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PD5G3EA Datasheet (PDF)

 ..1. Size:271K  niko-sem
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PD5G3EA

P-Channel Enhancement Mode PD5G3EA NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -30V 8m -81A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. Products Integrate

Datasheet: PC561BA , PD515BA , PD551BA , PD5B3BA , PD5B9BA , PD5C1BA , PD5C9BA , PD5E8BA , 10N65 , PD5P8BA , PD600BA , PD601CX , PD606BA , PD608BA , PD609CX , PD616BA , PD618BA .

History: BLA1011S-200R | AON7262E | RU1H190S | HFP9N50 | NVMFS5C628NL | IRFS9541 | IXTH1R4N250P3

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