PD5G3EA Datasheet. Specs and Replacement
Type Designator: PD5G3EA 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 89 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 81 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 92 nS
Cossⓘ - Output Capacitance: 800 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: TO-252
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PD5G3EA datasheet
pd5g3ea.pdf
P-Channel Enhancement Mode PD5G3EA NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -30V 8m -81A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. Products Integrate... See More ⇒
Detailed specifications: PC561BA, PD515BA, PD551BA, PD5B3BA, PD5B9BA, PD5C1BA, PD5C9BA, PD5E8BA, IRFP250, PD5P8BA, PD600BA, PD601CX, PD606BA, PD608BA, PD609CX, PD616BA, PD618BA
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