PD676BA Datasheet. Specs and Replacement

Type Designator: PD676BA  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 130 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100 nS

Cossⓘ - Output Capacitance: 705 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0029 Ohm

Package: TO-252

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PD676BA datasheet

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PD676BA

N-Channel Enhancement Mode PD676BA NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID D 40V 2.9m 133A G 1. GATE 2. DRAIN 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS 20 V TC = 2... See More ⇒

Detailed specifications: PD5P8BA, PD600BA, PD601CX, PD606BA, PD608BA, PD609CX, PD616BA, PD618BA, STP65NF06, PD6A4BA, PD6A6BA, PD6B2BA, PD6D2BA, PE527BA, PE532DX, PE533BA, PE551BA

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