PD676BA Specs and Replacement
Type Designator: PD676BA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 130 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 705 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0029 Ohm
Package: TO-252
PD676BA substitution
PD676BA datasheet
pd676ba.pdf
N-Channel Enhancement Mode PD676BA NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID D 40V 2.9m 133A G 1. GATE 2. DRAIN 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS 20 V TC = 2... See More ⇒
Detailed specifications: PD5P8BA , PD600BA , PD601CX , PD606BA , PD608BA , PD609CX , PD616BA , PD618BA , 18N50 , PD6A4BA , PD6A6BA , PD6B2BA , PD6D2BA , PE527BA , PE532DX , PE533BA , PE551BA .
History: PD6B2BA
Keywords - PD676BA MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: PD6B2BA
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