PE5B1DZ Specs and Replacement
Type Designator: PE5B1DZ
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 37 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 69 nS
Cossⓘ - Output Capacitance: 198 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
Package: PDFN3X3S
PE5B1DZ substitution
PE5B1DZ datasheet
pe5b1dz.pdf
Dual P-Channel Enhancement Mode PE5B1DZ NIKO-SEM PDFN 3x3S Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -30V 16m -37A Features Patent Pending. Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Applications Protection Circuits Application... See More ⇒
Detailed specifications: PD6B2BA , PD6D2BA , PE527BA , PE532DX , PE533BA , PE551BA , PE561BA , PE597BA , IRFB31N20D , PE5B5DX , PE5B7BA , PE5C6JZ , PE5E6BA , PE5F7EA , PE5G5EA , PE5M6EA , PE5Q8JZ .
Keywords - PE5B1DZ MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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