PE5B1DZ Datasheet. Specs and Replacement

Type Designator: PE5B1DZ  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 37 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 69 nS

Cossⓘ - Output Capacitance: 198 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: PDFN3X3S

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PE5B1DZ datasheet

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PE5B1DZ

Dual P-Channel Enhancement Mode PE5B1DZ NIKO-SEM PDFN 3x3S Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -30V 16m -37A Features Patent Pending. Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Applications Protection Circuits Application... See More ⇒

Detailed specifications: PD6B2BA, PD6D2BA, PE527BA, PE532DX, PE533BA, PE551BA, PE561BA, PE597BA, IRFZ46N, PE5B5DX, PE5B7BA, PE5C6JZ, PE5E6BA, PE5F7EA, PE5G5EA, PE5M6EA, PE5Q8JZ

Keywords - PE5B1DZ MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.