PE5B1DZ MOSFET. Datasheet pdf. Equivalent

   Type Designator: PE5B1DZ
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 37 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 15 nC
   trⓘ - Rise Time: 69 nS
   Cossⓘ - Output Capacitance: 198 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: PDFN3X3S

PE5B1DZ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUY TRANSISTORS