All MOSFET. PE5B1DZ Datasheet

 

PE5B1DZ Datasheet and Replacement


   Type Designator: PE5B1DZ
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 37 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 69 nS
   Cossⓘ - Output Capacitance: 198 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: PDFN3X3S
 

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PE5B1DZ Datasheet (PDF)

 ..1. Size:291K  niko-sem
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PE5B1DZ

Dual P-Channel Enhancement Mode PE5B1DZ NIKO-SEM PDFN 3x3S Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -30V 16m -37A Features Patent Pending. Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Applications Protection Circuits Application

Datasheet: PD6B2BA , PD6D2BA , PE527BA , PE532DX , PE533BA , PE551BA , PE561BA , PE597BA , IRF730 , PE5B5DX , PE5B7BA , PE5C6JZ , PE5E6BA , PE5F7EA , PE5G5EA , PE5M6EA , PE5Q8JZ .

History: NVMTS0D6N04C

Keywords - PE5B1DZ MOSFET datasheet

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