PE5B5DX Datasheet and Replacement
Type Designator: PE5B5DX
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 29 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 179 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: PDFN3X3P
PE5B5DX substitution
PE5B5DX Datasheet (PDF)
pe5b5dx.pdf

Dual P-Channel Enhancement PE5B5DX NIKO-SEM PDFN 3x3P Mode Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -20V 20m -30A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. Applications
Datasheet: PD6D2BA , PE527BA , PE532DX , PE533BA , PE551BA , PE561BA , PE597BA , PE5B1DZ , IRF1405 , PE5B7BA , PE5C6JZ , PE5E6BA , PE5F7EA , PE5G5EA , PE5M6EA , PE5Q8JZ , PE5V6BA .
History: NCEP40T11AK | NCEP40T12AGU
Keywords - PE5B5DX MOSFET datasheet
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History: NCEP40T11AK | NCEP40T12AGU



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