All MOSFET. PE5Q8JZ Datasheet

 

PE5Q8JZ Datasheet and Replacement


   Type Designator: PE5Q8JZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 55 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 555 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: PDFN3X3S
 
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PE5Q8JZ Datasheet (PDF)

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PE5Q8JZ

Dual N-Channel Enhancement Mode PE5Q8JZ NIKO-SEM PDFN 3x3S Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 12V 4.5m 55A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. Products In

Datasheet: PE5B1DZ , PE5B5DX , PE5B7BA , PE5C6JZ , PE5E6BA , PE5F7EA , PE5G5EA , PE5M6EA , AON7403 , PE5V6BA , PE609CA , PE674DT , PE6A4BA , PE6A6BA , PE6D2DX , PE6R8DX , PE6W2EA .

History: IXFH22N60P | IXTT64N25P | H5N2305PF

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