PE5Q8JZ Datasheet. Specs and Replacement

Type Designator: PE5Q8JZ  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 28 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 55 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 90 nS

Cossⓘ - Output Capacitance: 555 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm

Package: PDFN3X3S

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PE5Q8JZ datasheet

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PE5Q8JZ

Dual N-Channel Enhancement Mode PE5Q8JZ NIKO-SEM PDFN 3x3S Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 12V 4.5m 55A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. Products In... See More ⇒

Detailed specifications: PE5B1DZ, PE5B5DX, PE5B7BA, PE5C6JZ, PE5E6BA, PE5F7EA, PE5G5EA, PE5M6EA, 8N60, PE5V6BA, PE609CA, PE674DT, PE6A4BA, PE6A6BA, PE6D2DX, PE6R8DX, PE6W2EA

Keywords - PE5Q8JZ MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.