All MOSFET. PZC010BL Datasheet

 

PZC010BL MOSFET. Datasheet pdf. Equivalent


   Type Designator: PZC010BL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
   |Id|ⓘ - Maximum Drain Current: 2.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6.3 nC
   trⓘ - Rise Time: 5.3 nS
   Cossⓘ - Output Capacitance: 33 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.295 Ohm
   Package: SOT-223

 PZC010BL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PZC010BL Datasheet (PDF)

 ..1. Size:263K  niko-sem
 pzc010bl.pdf

PZC010BL PZC010BL

PZC010BL N-Channel Enhancement Mode NIKO-SEM SOT-223 Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 295m 2.2A 1. GATE ESD Protected Gate 2. DRAIN 3. SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS 16 V TA = 25 C 2.2 Continu

 8.1. Size:303K  niko-sem
 pzc010hk.pdf

PZC010BL PZC010BL

Dual N-Channel Enhancement Mode PZC010HK NIKO-SEM PDFN 5x6P Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY D1 D1 D2 D2V(BR)DSS RDS(ON) ID Drain Drain100V 295m 4.7A Gate GateG. GATE D. DRAIN S. SOURCE Source Source#1 S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drai

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: FS7VS-12A | SWD80N04V | SWN7N65K2 | MDU1536URH | PJD4NA65 | RU20P3C | 2SK2397-01MR

 

 
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