All MOSFET. PZF010HK Datasheet

 

PZF010HK Datasheet and Replacement


   Type Designator: PZF010HK
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 10.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 2.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.59 Ohm
   Package: PDFN5X6P
 

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PZF010HK Datasheet (PDF)

 ..1. Size:290K  niko-sem
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PZF010HK

Dual N-Channel Enhancement Mode PZF010HK NIKO-SEM PDFN 5x6P Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY D1 D1 D2 D2V(BR)DSS RDS(ON) ID Drain Drain100V 590m 2.7A Gate GateG. GATE D. DRAIN S. SOURCE Source Source#1 S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drai

Datasheet: PZ5D8EA , PZ5D8JZ , PZ5G7EA , PZ5S6EA , PZ5S6JZ , PZ607UZ , PZC010BL , PZC010HK , IRF1407 , SJMN030R60SCW , SJMN041R65SW , SJMN041RH65SW , SJMN065R65W , SJMN070R60SW , SJMN074R65SW , SJMN074RH65SW , SJMN088R65F .

History: SWP30N06 | HY1506I | STB200N4F3 | WMJ25N80M3 | SGT100N45T

Keywords - PZF010HK MOSFET datasheet

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