All MOSFET. AOSS21115C Datasheet

 

AOSS21115C Datasheet and Replacement


   Type Designator: AOSS21115C
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: SOT23
 

 AOSS21115C substitution

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AOSS21115C Datasheet (PDF)

 ..1. Size:291K  aosemi
 aoss21115c.pdf pdf_icon

AOSS21115C

AOSS21115C20V P-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology -20V Low RDS(ON) ID (at VGS=-4.5V) -4.5A Low Gate Charge RDS(ON) (at VGS=-4.5V)

 8.1. Size:383K  aosemi
 aoss21311c.pdf pdf_icon

AOSS21115C

AOSS21311C30V P-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology -30V Low RDS(ON) ID (at VGS=-10V) -4.3A Low Gate Charge RDS(ON) (at VGS=-10V)

 8.2. Size:349K  aosemi
 aoss21319c.pdf pdf_icon

AOSS21115C

AOSS21319C30V P-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology -30V Low RDS(ON) ID (at VGS=-10V) -2.8A Low Gate Charge RDS(ON) (at VGS=-10V)

 8.3. Size:322K  aosemi
 aoss21329.pdf pdf_icon

AOSS21115C

AOSS2132930V P-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology -30V Low RDS(ON) ID (at VGS=-10V) -2.8A Low Gate Charge RDS(ON) (at VGS=-10V)

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Datasheet: AOSP32320C , AOSP36326C , AOSP62530 , AOSP62626E , AOSP66919 , AOSP66920 , AOSP66923 , AOSP66925 , IRF830 , AOSS21311C , AOSS21319C , AOSS21329 , AOSS32128 , AOSS32136C , AOSS32334C , AOSS32338C , AO3160E .

History: BRCS080N10SHZC | AOP605 | PSMN011-100YSF | UT120N03

Keywords - AOSS21115C MOSFET datasheet

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