All MOSFET. AOSS21115C Datasheet

 

AOSS21115C MOSFET. Datasheet pdf. Equivalent


   Type Designator: AOSS21115C
   Marking Code: LP*
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.95 V
   |Id|ⓘ - Maximum Drain Current: 4.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 8.5 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: SOT23

 AOSS21115C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AOSS21115C Datasheet (PDF)

 ..1. Size:291K  aosemi
 aoss21115c.pdf

AOSS21115C AOSS21115C

AOSS21115C20V P-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology -20V Low RDS(ON) ID (at VGS=-4.5V) -4.5A Low Gate Charge RDS(ON) (at VGS=-4.5V)

 8.1. Size:383K  aosemi
 aoss21311c.pdf

AOSS21115C AOSS21115C

AOSS21311C30V P-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology -30V Low RDS(ON) ID (at VGS=-10V) -4.3A Low Gate Charge RDS(ON) (at VGS=-10V)

 8.2. Size:349K  aosemi
 aoss21319c.pdf

AOSS21115C AOSS21115C

AOSS21319C30V P-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology -30V Low RDS(ON) ID (at VGS=-10V) -2.8A Low Gate Charge RDS(ON) (at VGS=-10V)

 8.3. Size:322K  aosemi
 aoss21329.pdf

AOSS21115C AOSS21115C

AOSS2132930V P-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology -30V Low RDS(ON) ID (at VGS=-10V) -2.8A Low Gate Charge RDS(ON) (at VGS=-10V)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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