All MOSFET. AOK66914 Datasheet

 

AOK66914 Datasheet and Replacement


   Type Designator: AOK66914
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 500 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 155 nC
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 3190 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm
   Package: TO247
 

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AOK66914 Datasheet (PDF)

 ..1. Size:368K  aosemi
 aok66914.pdf pdf_icon

AOK66914

AOK66914TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 120A Extremely Low RDS(ON) Optimized switching performance RDS(ON) (at VGS=10V)

 9.1. Size:375K  aosemi
 aok66613.pdf pdf_icon

AOK66914

AOK66613TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 120A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V)

 9.2. Size:375K  aosemi
 aok66518.pdf pdf_icon

AOK66914

AOK66518TM150V N-Channel AlphaSGTGeneral Description Product SummaryVDS150V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 120A Extremely Low RDS(ON) Optimized switching performance RDS(ON) (at VGS=10V)

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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