All MOSFET. AOUS66416 Datasheet

 

AOUS66416 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AOUS66416
   Marking Code: 66416
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 73.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 69 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 31 nC
   trⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 440 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm
   Package: ULTRASO-8L

 AOUS66416 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AOUS66416 Datasheet (PDF)

 ..1. Size:349K  aosemi
 aous66416.pdf

AOUS66416 AOUS66416

AOUS66416TM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 69A Low RDS(ON) Excellent QG x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V)

 6.1. Size:707K  aosemi
 aous66414.pdf

AOUS66416 AOUS66416

AOUS66414TM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 92A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

 8.1. Size:717K  aosemi
 aous66616.pdf

AOUS66416 AOUS66416

AOUS66616TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 92A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V)

 8.2. Size:771K  aosemi
 aous66920.pdf

AOUS66416 AOUS66416

AOUS66920TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 69A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

 8.3. Size:727K  aosemi
 aous66923.pdf

AOUS66416 AOUS66416

AOUS66923TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 58A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

 8.4. Size:758K  aosemi
 aous66620.pdf

AOUS66416 AOUS66416

AOUS66620TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 46A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product(FOM) RDS(ON) (at VGS=10V)

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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