AOUS66620 Specs and Replacement
Type Designator: AOUS66620
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 52 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 46 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 310 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: ULTRASO-8L
AOUS66620 substitution
AOUS66620 datasheet
aous66620.pdf
AOUS66620 TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 46A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product(FOM) RDS(ON) (at VGS=10V) ... See More ⇒
aous66616.pdf
AOUS66616 TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 92A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V) ... See More ⇒
aous66920.pdf
AOUS66920 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 69A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V) ... See More ⇒
Detailed specifications: AOTS26108 , AOTS32334C , AOTS32338C , AOTE21115C , AOTE32136C , AOUS66414 , AOUS66416 , AOUS66616 , IRFP450 , AOUS66920 , AOUS66923 , FXN0603D , FXN0607CN , FXN06S085C , FXN0703D , FXN0704C , FXN0406H .
Keywords - AOUS66620 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
