AOUS66923 Datasheet. Specs and Replacement

Type Designator: AOUS66923  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 73 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 58 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 360 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm

Package: ULTRASO-8L

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AOUS66923 datasheet

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AOUS66923

AOUS66923 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 58A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V) ... See More ⇒

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AOUS66923

AOUS66920 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 69A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V) ... See More ⇒

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AOUS66923

AOUS66616 TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 92A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V) ... See More ⇒

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AOUS66923

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Detailed specifications: AOTS32338C, AOTE21115C, AOTE32136C, AOUS66414, AOUS66416, AOUS66616, AOUS66620, AOUS66920, 5N60, FXN0603D, FXN0607CN, FXN06S085C, FXN0703D, FXN0704C, FXN0406H, FXN0503D, FXN0504D

Keywords - AOUS66923 MOSFET specs

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