All MOSFET. AOUS66923 Datasheet

 

AOUS66923 Datasheet and Replacement


   Type Designator: AOUS66923
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 73 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 58 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 360 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: ULTRASO-8L
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AOUS66923 Datasheet (PDF)

 ..1. Size:727K  aosemi
 aous66923.pdf pdf_icon

AOUS66923

AOUS66923TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 58A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

 6.1. Size:771K  aosemi
 aous66920.pdf pdf_icon

AOUS66923

AOUS66920TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 69A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

 8.1. Size:717K  aosemi
 aous66616.pdf pdf_icon

AOUS66923

AOUS66616TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 92A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V)

 8.2. Size:707K  aosemi
 aous66414.pdf pdf_icon

AOUS66923

AOUS66414TM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 92A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

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History: VBNC1303 | IRFS4010PBF

Keywords - AOUS66923 MOSFET datasheet

 AOUS66923 cross reference
 AOUS66923 equivalent finder
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 AOUS66923 replacement

 

 
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