All MOSFET. FXN18N50F Datasheet

 

FXN18N50F Datasheet and Replacement


   Type Designator: FXN18N50F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 15.3 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 760 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
   Package: TO220F
 

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FXN18N50F Datasheet (PDF)

 ..1. Size:746K  cn fx-semi
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FXN18N50F

FuXin Semiconductor Co., Ltd. FXN18N50F Series Rev.AGeneral Description Features The FXN18N50F uses advanced Silicon s MOSFET Technology, which V = 500V DSprovides high performance in on-state resistance, fast switching ID = 18A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in ind

 8.1. Size:388K  cn fx-semi
 fxn18n20c.pdf pdf_icon

FXN18N50F

FuXin Semiconductor Co., Ltd. FXN18N20C Series Rev.A General Description Features The FXN18N20C uses advanced Silicon s MOSFET Technology, which VDS = 200V provides high performance in on-state resistance, fast switching ID = 18A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in indust

Datasheet: FXN0303D , FXN0304C , FXN9N45F , FXN9N50F , FXN9N90F , FXN9N90P , FXN15S50F , FXN18N20C , IRF9640 , FXN20N50F , FXN0704F , FXN0706C , FXN0707C , FXN0707CN , FXN4613F , FXN4615F , FXN4620F .

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