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FXN09150C Specs and Replacement


   Type Designator: FXN09150C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 380 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 103 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 75 nS
   Cossⓘ - Output Capacitance: 480 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
   Package: TO220
 

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FXN09150C Specs

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FXN09150C

FuXin Semiconductor Co., Ltd. FXN09150C Series Rev.A General Description Features The FXN09150C uses advanced Silicon s MOSFET Technology, which VDS = 150V provides high performance in on-state resistance, fast switching ID = 120A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial appl... See More ⇒

Detailed specifications: FXN10N80F , FXN5N65D , FXN5N65F , FXN5N65FM , FXN65S55T , FXN07N10NS , FXN0808C , FXN08S65D , IRF540 , FXN4607F , FXN4609F , FXN4611F , FXN4628F , FXN11N45F , FXN12N60FS , FXN12N65F , FXN12S65F .

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