FXN09150C Datasheet. Specs and Replacement

Type Designator: FXN09150C  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 380 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 103 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 75 nS

Cossⓘ - Output Capacitance: 480 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm

Package: TO220

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FXN09150C datasheet

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FXN09150C

FuXin Semiconductor Co., Ltd. FXN09150C Series Rev.A General Description Features The FXN09150C uses advanced Silicon s MOSFET Technology, which VDS = 150V provides high performance in on-state resistance, fast switching ID = 120A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial appl... See More ⇒

Detailed specifications: FXN10N80F, FXN5N65D, FXN5N65F, FXN5N65FM, FXN65S55T, FXN07N10NS, FXN0808C, FXN08S65D, IRF540, FXN4607F, FXN4609F, FXN4611F, FXN4628F, FXN11N45F, FXN12N60FS, FXN12N65F, FXN12S65F

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