All MOSFET. FXN09150C Datasheet

 

FXN09150C MOSFET. Datasheet pdf. Equivalent


   Type Designator: FXN09150C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 380 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 103 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 78 nC
   trⓘ - Rise Time: 75 nS
   Cossⓘ - Output Capacitance: 480 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
   Package: TO220
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FXN09150C Datasheet (PDF)

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FXN09150C FXN09150C

FuXin Semiconductor Co., Ltd.FXN09150C Series Rev.AGeneral Description FeaturesThe FXN09150C uses advanced Silicon s MOSFET Technology, whichVDS = 150Vprovides high performance in on-state resistance, fast switchingID = 120A @VGS = 10Vperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial appl

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