FXN40N20C MOSFET Datasheet: N-Ch, 200V, 30A. Full specification with pinout and replacement list

FXN40N20C Specs and Replacement

Type Designator: FXN40N20C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 174 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 56 nS

Cossⓘ - Output Capacitance: 345 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: TO220

FXN40N20C substitution

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FXN40N20C datasheet

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FuXin Semiconductor Co., Ltd. FXN40N20C Series Rev.A General Description Features The FXN40N20C uses advanced Planar Vdmos Technology, which VDS = 200V provides high performance in on-state resistance, fast switching ID = 40A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial applications ... See More ⇒

8.1. Size:678K cn fx-semi
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fxn40n03h.pdf pdf_icon

FuXin Semiconductor Co., Ltd. FXN40N03H Series Rev.A General Description Features The FXN40N03H uses advanced Silicon s MOSFET Technology, which VDS = 30V provides high performance in on-state resistance, fast switching ID = 40A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industr... See More ⇒

Detailed specifications: FXN4628F , FXN11N45F , FXN12N60FS , FXN12N65F , FXN12S65F , FXN32N55T , FXN40N03C , FXN40N03H , IRF3710 , FXN13N45F , FXN13N50C , FXN13N50K , FXN15N06D , FXN30S55C , FXN30S55F , FXN30S60F , FXN30S60T .