All MOSFET. FXN40N20C Datasheet

 

FXN40N20C Datasheet and Replacement


   Type Designator: FXN40N20C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 174 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 165 nC
   tr ⓘ - Rise Time: 56 nS
   Cossⓘ - Output Capacitance: 345 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: TO220
 

 FXN40N20C substitution

   - MOSFET ⓘ Cross-Reference Search

 

FXN40N20C Datasheet (PDF)

 ..1. Size:797K  cn fx-semi
 fxn40n20c.pdf pdf_icon

FXN40N20C

FuXin Semiconductor Co., Ltd.FXN40N20C Series Rev.AGeneral Description FeaturesThe FXN40N20C uses advanced Planar Vdmos Technology, whichVDS = 200Vprovides high performance in on-state resistance, fast switchingID = 40A @VGS = 10Vperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial applications

 8.1. Size:678K  cn fx-semi
 fxn40n03c.pdf pdf_icon

FXN40N20C

 8.2. Size:333K  cn fx-semi
 fxn40n03h.pdf pdf_icon

FXN40N20C

FuXin Semiconductor Co., Ltd. FXN40N03H Series Rev.A General Description Features The FXN40N03H uses advanced Silicon s MOSFET Technology, which VDS = 30V provides high performance in on-state resistance, fast switching ID = 40A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industr

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , SPP20N60C3 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

Keywords - FXN40N20C MOSFET datasheet

 FXN40N20C cross reference
 FXN40N20C equivalent finder
 FXN40N20C lookup
 FXN40N20C substitution
 FXN40N20C replacement

 

 
Back to Top

 


 
.