All MOSFET. FXN20S60F Datasheet

 

FXN20S60F Datasheet and Replacement


   Type Designator: FXN20S60F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 49 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 17 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 78 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: TO220F
 

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FXN20S60F Datasheet (PDF)

 ..1. Size:557K  cn fx-semi
 fxn20s60f.pdf pdf_icon

FXN20S60F

FuXin Semiconductor Co., Ltd. FXN20S60FSeries Rev.AGeneral Description Features The FXN20S60Fuses advanced Silicon s MOSFET Technology, which V = 600V DSprovides high performance in on-state resistance, fast switching ID =20A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in indust

 9.1. Size:485K  cn fx-semi
 fxn20n50f.pdf pdf_icon

FXN20S60F

FuXin Semiconductor Co., Ltd.FXN20N50F Series Rev.AGeneral Description FeaturesThe FXN20N50F uses advanced Silicon s MOSFET Technology, whichV = 500VDSprovides high performance in on-state resistance, fast switchingID = 20A @V = 10VGSperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial a

Datasheet: FXN13N45F , FXN13N50C , FXN13N50K , FXN15N06D , FXN30S55C , FXN30S55F , FXN30S60F , FXN30S60T , IRF9540 , FXN23S65F , FXN25N50F , FXN25S55GF , FXN28N50F , FXN28N50P , FXN28N50T , FXN28S50F , FXN15N50F .

Keywords - FXN20S60F MOSFET datasheet

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