FXN20S60F MOSFET Datasheet: N-Ch, 600V, 17A. Full specification with pinout and replacement list

FXN20S60F Specs and Replacement

Type Designator: FXN20S60F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 49 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 17 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 78 nS

Cossⓘ - Output Capacitance: 160 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm

Package: TO220F

FXN20S60F substitution

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FXN20S60F datasheet

..1. Size:557K cn fx-semi
fxn20s60f.pdf pdf_icon

FuXin Semiconductor Co., Ltd. FXN20S60FSeries Rev.A General Description Features The FXN20S60Fuses advanced Silicon s MOSFET Technology, which V = 600V DS provides high performance in on-state resistance, fast switching ID =20A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in indust... See More ⇒

9.1. Size:485K cn fx-semi
fxn20n50f.pdf pdf_icon

FuXin Semiconductor Co., Ltd. FXN20N50F Series Rev.A General Description Features The FXN20N50F uses advanced Silicon s MOSFET Technology, which V = 500V DS provides high performance in on-state resistance, fast switching ID = 20A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial a... See More ⇒

Detailed specifications: FXN13N45F , FXN13N50C , FXN13N50K , FXN15N06D , FXN30S55C , FXN30S55F , FXN30S60F , FXN30S60T , IRF630 , FXN23S65F , FXN25N50F , FXN25S55GF , FXN28N50F , FXN28N50P , FXN28N50T , FXN28S50F , FXN15N50F .