FXN20S60F Datasheet. Specs and Replacement

Type Designator: FXN20S60F  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 49 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 17 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 78 nS

Cossⓘ - Output Capacitance: 160 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm

Package: TO220F

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FXN20S60F datasheet

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FXN20S60F

FuXin Semiconductor Co., Ltd. FXN20S60FSeries Rev.A General Description Features The FXN20S60Fuses advanced Silicon s MOSFET Technology, which V = 600V DS provides high performance in on-state resistance, fast switching ID =20A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in indust... See More ⇒

 9.1. Size:485K  cn fx-semi
 fxn20n50f.pdf pdf_icon

FXN20S60F

FuXin Semiconductor Co., Ltd. FXN20N50F Series Rev.A General Description Features The FXN20N50F uses advanced Silicon s MOSFET Technology, which V = 500V DS provides high performance in on-state resistance, fast switching ID = 20A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial a... See More ⇒

Detailed specifications: FXN13N45F, FXN13N50C, FXN13N50K, FXN15N06D, FXN30S55C, FXN30S55F, FXN30S60F, FXN30S60T, IRFP250N, FXN23S65F, FXN25N50F, FXN25S55GF, FXN28N50F, FXN28N50P, FXN28N50T, FXN28S50F, FXN15N50F

Keywords - FXN20S60F MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.