FXN15N50F Datasheet and Replacement
Type Designator: FXN15N50F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 39 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 12.3 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 37 nS
Cossⓘ - Output Capacitance: 228 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO220F
FXN15N50F substitution
FXN15N50F Datasheet (PDF)
fxn15n50f.pdf
FuXin Semiconductor Co., Ltd.FXN15N50F Series Rev.AGeneral Description FeaturesThe FXN15N50F uses advanced Silicon s MOSFET Technology, whichV = 500VDSprovides high performance in on-state resistance, fast switchingID = 15A @V = 10VGSperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial a
fxn15n06d.pdf
FuXin Semiconductor Co., Ltd. FXN15N06D Series Rev.AGeneral Description Features The FXN15N06D uses advanced Silicon s MOSFET Technology, whicVDS = 60V h ID = 45A @VGS = 10V provides high performance in on-state resistance, fast switching Very low on-resistance performance, and excellent quality. RDS(ON)
fxn15s50f.pdf
FuXin Semiconductor Co., Ltd.FXN15S50F Series Rev.AGeneral Description FeaturesThe FXN15S50F uses advanced Cool MOSFET Technology, whichV = 500VDSprovides high performance in on-state resistance, fast switchingID = 15A @V = 10VGSperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial application
Datasheet: FXN20S60F , FXN23S65F , FXN25N50F , FXN25S55GF , FXN28N50F , FXN28N50P , FXN28N50T , FXN28S50F , IRLB4132 , FXN2N60D , FXN30N50F , FXN30N50T , FXN9N40C , FXN4N60D , FXN4N65D , FXN7N65D , CRJQ99N65G2 .
History: FQPF5N50CT
Keywords - FXN15N50F MOSFET datasheet
FXN15N50F cross reference
FXN15N50F equivalent finder
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FXN15N50F replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: FQPF5N50CT
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