FXN15N50F Datasheet and Replacement
Type Designator: FXN15N50F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 39 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 12.3 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 37 nS
Cossⓘ - Output Capacitance: 228 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO220F
FXN15N50F substitution
FXN15N50F Datasheet (PDF)
fxn15n50f.pdf

FuXin Semiconductor Co., Ltd.FXN15N50F Series Rev.AGeneral Description FeaturesThe FXN15N50F uses advanced Silicon s MOSFET Technology, whichV = 500VDSprovides high performance in on-state resistance, fast switchingID = 15A @V = 10VGSperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial a
fxn15n06d.pdf

FuXin Semiconductor Co., Ltd. FXN15N06D Series Rev.AGeneral Description Features The FXN15N06D uses advanced Silicon s MOSFET Technology, whicVDS = 60V h ID = 45A @VGS = 10V provides high performance in on-state resistance, fast switching Very low on-resistance performance, and excellent quality. RDS(ON)
fxn15s50f.pdf

FuXin Semiconductor Co., Ltd.FXN15S50F Series Rev.AGeneral Description FeaturesThe FXN15S50F uses advanced Cool MOSFET Technology, whichV = 500VDSprovides high performance in on-state resistance, fast switchingID = 15A @V = 10VGSperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial application
Datasheet: FXN20S60F , FXN23S65F , FXN25N50F , FXN25S55GF , FXN28N50F , FXN28N50P , FXN28N50T , FXN28S50F , IRLB4132 , FXN2N60D , FXN30N50F , FXN30N50T , FXN9N40C , FXN4N60D , FXN4N65D , FXN7N65D , CRJQ99N65G2 .
History: APQ13SN50AF | H5N5006LD | BRF5N50 | IRFP450NPBF | STP5N50FI | HFP5N50S | BL5N50-A
Keywords - FXN15N50F MOSFET datasheet
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History: APQ13SN50AF | H5N5006LD | BRF5N50 | IRFP450NPBF | STP5N50FI | HFP5N50S | BL5N50-A



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