FXN15N50F Datasheet and Replacement
Type Designator: FXN15N50F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 39 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 12.3 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 60 nC
trⓘ - Rise Time: 37 nS
Cossⓘ - Output Capacitance: 228 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO220F
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FXN15N50F Datasheet (PDF)
fxn15n50f.pdf
FuXin Semiconductor Co., Ltd.FXN15N50F Series Rev.AGeneral Description FeaturesThe FXN15N50F uses advanced Silicon s MOSFET Technology, whichV = 500VDSprovides high performance in on-state resistance, fast switchingID = 15A @V = 10VGSperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial a
fxn15n06d.pdf
FuXin Semiconductor Co., Ltd. FXN15N06D Series Rev.AGeneral Description Features The FXN15N06D uses advanced Silicon s MOSFET Technology, whicVDS = 60V h ID = 45A @VGS = 10V provides high performance in on-state resistance, fast switching Very low on-resistance performance, and excellent quality. RDS(ON)
fxn15s50f.pdf
FuXin Semiconductor Co., Ltd.FXN15S50F Series Rev.AGeneral Description FeaturesThe FXN15S50F uses advanced Cool MOSFET Technology, whichV = 500VDSprovides high performance in on-state resistance, fast switchingID = 15A @V = 10VGSperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial application
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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