FXN15N50F Datasheet. Specs and Replacement

Type Designator: FXN15N50F  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 39 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 12.3 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 37 nS

Cossⓘ - Output Capacitance: 228 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm

Package: TO220F

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FXN15N50F datasheet

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FXN15N50F

FuXin Semiconductor Co., Ltd. FXN15N50F Series Rev.A General Description Features The FXN15N50F uses advanced Silicon s MOSFET Technology, which V = 500V DS provides high performance in on-state resistance, fast switching ID = 15A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial a... See More ⇒

 8.1. Size:701K  cn fx-semi
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FXN15N50F

FuXin Semiconductor Co., Ltd. FXN15N06D Series Rev.A General Description Features The FXN15N06D uses advanced Silicon s MOSFET Technology, whic VDS = 60V h ID = 45A @VGS = 10V provides high performance in on-state resistance, fast switching Very low on-resistance performance, and excellent quality. RDS(ON) ... See More ⇒

 9.1. Size:450K  cn fx-semi
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FXN15N50F

FuXin Semiconductor Co., Ltd. FXN15S50F Series Rev.A General Description Features The FXN15S50F uses advanced Cool MOSFET Technology, which V = 500V DS provides high performance in on-state resistance, fast switching ID = 15A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial application... See More ⇒

Detailed specifications: FXN20S60F, FXN23S65F, FXN25N50F, FXN25S55GF, FXN28N50F, FXN28N50P, FXN28N50T, FXN28S50F, 2SK3878, FXN2N60D, FXN30N50F, FXN30N50T, FXN9N40C, FXN4N60D, FXN4N65D, FXN7N65D, CRJQ99N65G2

Keywords - FXN15N50F MOSFET specs

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