All MOSFET. FXN4N60D Datasheet

 

FXN4N60D Datasheet and Replacement


   Type Designator: FXN4N60D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 80 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2.8 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 24.6 nS
   Cossⓘ - Output Capacitance: 48 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO252
 

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FXN4N60D Datasheet (PDF)

 ..1. Size:353K  cn fx-semi
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FXN4N60D

FuXin Semiconductor Co., Ltd. FXN4N60D Series Rev.A General Description Features The FXN4N60D uses advanced Silicon s MOSFET Technology, which VDS = 600V provides high performance in on-state resistance, fast switching ID = 4A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria

 8.1. Size:472K  cn fx-semi
 fxn4n65d.pdf pdf_icon

FXN4N60D

FuXin Semiconductor Co., Ltd. FXN4N65D Series Rev.A General Description Features The FXN4N65D uses advanced Silicon s MOSFET Technology, which VDS = 650V provides high performance in on-state resistance, fast switching ID = 4A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria

Datasheet: FXN28N50P , FXN28N50T , FXN28S50F , FXN15N50F , FXN2N60D , FXN30N50F , FXN30N50T , FXN9N40C , IRF9540N , FXN4N65D , FXN7N65D , CRJQ99N65G2 , LSD07N80A-VB , FXN0204C , FXN0204CQ , FXN100S55T , FXN9N20C .

History: IRFR014PBF | IRFR010PBF | BRCS4N65AA | STS6N20 | BL15N25-A | SE138U | IXFK44N50

Keywords - FXN4N60D MOSFET datasheet

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