All MOSFET. FXN7N65D Datasheet

 

FXN7N65D Datasheet and Replacement


   Type Designator: FXN7N65D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 170 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 6.4 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 30 nC
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 108 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO252
 

 FXN7N65D substitution

   - MOSFET ⓘ Cross-Reference Search

 

FXN7N65D Datasheet (PDF)

 ..1. Size:1187K  cn fx-semi
 fxn7n65d.pdf pdf_icon

FXN7N65D

FuXin Semiconductor Co., Ltd. FXN7N65D Series Rev.A General Description Features The FXN7N65D uses advanced Silicon s MOSFET Technology, which VDS = 650V provides high performance in on-state resistance, fast switching ID = 7A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria

 7.1. Size:362K  cn fx-semi
 fxn7n65f.pdf pdf_icon

FXN7N65D

FXN7N65F Electrical Characteristics (TJ =25oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V 660 - - V Gate Threshold Voltage VGS(th) - 2.0 4.0 VDS = VGS, ID = 250A Drain Cut-Off Current IDSS VDS = 650V, VGS = 0V 1.0 - - A VGS = 30V, VDS = 0V - 0.1 Gate Leakage Current

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: MSK4D5N60F

Keywords - FXN7N65D MOSFET datasheet

 FXN7N65D cross reference
 FXN7N65D equivalent finder
 FXN7N65D lookup
 FXN7N65D substitution
 FXN7N65D replacement

 

 
Back to Top

 


 
.