CRJQ99N65G2 Datasheet. Specs and Replacement

Type Designator: CRJQ99N65G2  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 245 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 42.5 nS

Cossⓘ - Output Capacitance: 133 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm

Package: TO247

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CRJQ99N65G2 datasheet

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CRJQ99N65G2

CRJQ99N65G2 ( ) SJMOS N-MOSFET 650V, 81m , 35A Features Product Summary CRM(CQ) Super_Junction technology Much lower Ron*A performance for On-state efficiency VDS 650V RDS(on)_typ Better efficiency due to very low FOM 81m ID 35A Applications 100% DVDS Tested 100% DVDS Tested LED/LCD/PDP TV and monitor Lighting 100% Avalanche Test... See More ⇒

Detailed specifications: FXN15N50F, FXN2N60D, FXN30N50F, FXN30N50T, FXN9N40C, FXN4N60D, FXN4N65D, FXN7N65D, SPP20N60C3, LSD07N80A-VB, FXN0204C, FXN0204CQ, FXN100S55T, FXN9N20C, 630, 110N04, 13N90

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.