CRJQ99N65G2 Specs and Replacement
Type Designator: CRJQ99N65G2
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 245 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 35 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 42.5 nS
Cossⓘ - Output Capacitance: 133 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm
Package: TO247
CRJQ99N65G2 substitution
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CRJQ99N65G2 datasheet
crjq99n65g2.pdf
CRJQ99N65G2 ( ) SJMOS N-MOSFET 650V, 81m , 35A Features Product Summary CRM(CQ) Super_Junction technology Much lower Ron*A performance for On-state efficiency VDS 650V RDS(on)_typ Better efficiency due to very low FOM 81m ID 35A Applications 100% DVDS Tested 100% DVDS Tested LED/LCD/PDP TV and monitor Lighting 100% Avalanche Test... See More ⇒
Detailed specifications: FXN15N50F , FXN2N60D , FXN30N50F , FXN30N50T , FXN9N40C , FXN4N60D , FXN4N65D , FXN7N65D , 13N50 , LSD07N80A-VB , FXN0204C , FXN0204CQ , FXN100S55T , FXN9N20C , 630 , 110N04 , 13N90 .
Keywords - CRJQ99N65G2 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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