All MOSFET. CRJQ99N65G2 Datasheet

 

CRJQ99N65G2 Datasheet and Replacement


   Type Designator: CRJQ99N65G2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 245 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 42.5 nS
   Cossⓘ - Output Capacitance: 133 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm
   Package: TO247
 

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CRJQ99N65G2 Datasheet (PDF)

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CRJQ99N65G2

CRJQ99N65G2() SJMOS N-MOSFET 650V, 81m, 35AFeatures Product Summary CRM(CQ) Super_Junction technology Much lower Ron*A performance for On-state efficiency VDS 650VRDS(on)_typ Better efficiency due to very low FOM 81mID35AApplications100% DVDS Tested100% DVDS Tested LED/LCD/PDP TV and monitor Lighting100% Avalanche Test

Datasheet: FXN15N50F , FXN2N60D , FXN30N50F , FXN30N50T , FXN9N40C , FXN4N60D , FXN4N65D , FXN7N65D , TK10A60D , LSD07N80A-VB , FXN0204C , FXN0204CQ , FXN100S55T , FXN9N20C , 630 , 110N04 , 13N90 .

History: WMK180N03TS | SI9424DY | B50N06 | AOT4N60 | JMTP3010D | DM4N65E | IXTH10N100

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