All MOSFET. CRJQ99N65G2 Datasheet

 

CRJQ99N65G2 Datasheet and Replacement


   Type Designator: CRJQ99N65G2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 245 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 70 nC
   tr ⓘ - Rise Time: 42.5 nS
   Cossⓘ - Output Capacitance: 133 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm
   Package: TO247
 

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CRJQ99N65G2 Datasheet (PDF)

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CRJQ99N65G2

CRJQ99N65G2() SJMOS N-MOSFET 650V, 81m, 35AFeatures Product Summary CRM(CQ) Super_Junction technology Much lower Ron*A performance for On-state efficiency VDS 650VRDS(on)_typ Better efficiency due to very low FOM 81mID35AApplications100% DVDS Tested100% DVDS Tested LED/LCD/PDP TV and monitor Lighting100% Avalanche Test

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFP460 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: B50N06

Keywords - CRJQ99N65G2 MOSFET datasheet

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