CRJQ99N65G2 Datasheet. Specs and Replacement
Type Designator: CRJQ99N65G2 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 245 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 35 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 42.5 nS
Cossⓘ - Output Capacitance: 133 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm
Package: TO247
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CRJQ99N65G2 datasheet
crjq99n65g2.pdf
CRJQ99N65G2 ( ) SJMOS N-MOSFET 650V, 81m , 35A Features Product Summary CRM(CQ) Super_Junction technology Much lower Ron*A performance for On-state efficiency VDS 650V RDS(on)_typ Better efficiency due to very low FOM 81m ID 35A Applications 100% DVDS Tested 100% DVDS Tested LED/LCD/PDP TV and monitor Lighting 100% Avalanche Test... See More ⇒
Detailed specifications: FXN15N50F, FXN2N60D, FXN30N50F, FXN30N50T, FXN9N40C, FXN4N60D, FXN4N65D, FXN7N65D, SPP20N60C3, LSD07N80A-VB, FXN0204C, FXN0204CQ, FXN100S55T, FXN9N20C, 630, 110N04, 13N90
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History: FXN4N65D
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