LSD07N80A-VB Datasheet. Specs and Replacement
Type Designator: LSD07N80A-VB 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 190 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 38 nS
Cossⓘ - Output Capacitance: 800 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 typ Ohm
Package: TO220F
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LSD07N80A-VB substitution
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LSD07N80A-VB datasheet
Detailed specifications: FXN2N60D, FXN30N50F, FXN30N50T, FXN9N40C, FXN4N60D, FXN4N65D, FXN7N65D, CRJQ99N65G2, AON6380, FXN0204C, FXN0204CQ, FXN100S55T, FXN9N20C, 630, 110N04, 13N90, 14N65
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