LSD07N80A-VB Specs and Replacement
Type Designator: LSD07N80A-VB
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 190 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 38 nS
Cossⓘ - Output Capacitance: 800 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2(typ) Ohm
Package: TO220F
LSD07N80A-VB substitution
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LSD07N80A-VB datasheet
Detailed specifications: FXN2N60D , FXN30N50F , FXN30N50T , FXN9N40C , FXN4N60D , FXN4N65D , FXN7N65D , CRJQ99N65G2 , AON7410 , FXN0204C , FXN0204CQ , FXN100S55T , FXN9N20C , 630 , 110N04 , 13N90 , 14N65 .
History: FXN100S55T
Keywords - LSD07N80A-VB MOSFET specs
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LSD07N80A-VB substitution
LSD07N80A-VB replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: FXN100S55T
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