LSD07N80A-VB Datasheet. Specs and Replacement

Type Designator: LSD07N80A-VB  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 190 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 38 nS

Cossⓘ - Output Capacitance: 800 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 typ Ohm

Package: TO220F

  📄📄 Copy 

LSD07N80A-VB substitution

- MOSFET ⓘ Cross-Reference Search

 

LSD07N80A-VB datasheet

 ..1. Size:407K  1
lsd07n80a-vb.pdf pdf_icon

LSD07N80A-VB

LSD07N80A-VB ... See More ⇒

Detailed specifications: FXN2N60D, FXN30N50F, FXN30N50T, FXN9N40C, FXN4N60D, FXN4N65D, FXN7N65D, CRJQ99N65G2, AON6380, FXN0204C, FXN0204CQ, FXN100S55T, FXN9N20C, 630, 110N04, 13N90, 14N65

Keywords - LSD07N80A-VB MOSFET specs

 LSD07N80A-VB cross reference

 LSD07N80A-VB equivalent finder

 LSD07N80A-VB pdf lookup

 LSD07N80A-VB substitution

 LSD07N80A-VB replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.