DH019N04E Specs and Replacement
Type Designator: DH019N04E
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 255 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 250 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 140 nS
Cossⓘ - Output Capacitance: 784 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
Package: TO263
DH019N04E substitution
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DH019N04E datasheet
dh019n04 dh019n04f dh019n04i dh019n04e dh019n04b dh019n04d.pdf
DH019N04/DH019N04F/DH019N04I DH019N04E/DH019N04B/DH019N04D 250A 40V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 40V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 2m DS(on) (TYP) standard. 1 3 S I = 250A D 2 Features Fast switchin... See More ⇒
Detailed specifications: DH0159B , DH0159D , DH0159E , DH0159F , DH0159I , DH019N04 , DH019N04B , DH019N04D , 18N50 , 20N65D , 23N50D , 5N65C , 60N10B , 60N10D , 60N10E , 60N10F , 60N10I .
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