DCCF160M120G1 Datasheet. Specs and Replacement

Type Designator: DCCF160M120G1  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 54 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.196 Ohm

Package: TO247-4

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DCCF160M120G1 datasheet

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DCCF160M120G1

DCC160M120G1 DCCF160M120G1 18A 1200V N-channel SIC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. 2 Features Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Freq... See More ⇒

Detailed specifications: DH100P25B, DH100P25D, DH100P25E, DH100P25F, DH100P25I, DCCF040M65G2, DCCF060M65G2, DCCF080M120A2, 13N50, DH025N03, DH025N03B, DH025N03D, DH025N03E, DH025N03F, DH025N03I, DH025N04, DH025N04B

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