All MOSFET. DCCF160M120G1 Datasheet

 

DCCF160M120G1 Datasheet and Replacement


   Type Designator: DCCF160M120G1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 54 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.196 Ohm
   Package: TO247-4
 

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DCCF160M120G1 Datasheet (PDF)

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DCCF160M120G1

DCC160M120G1DCCF160M120G1 18A 1200V N-channel SIC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. 2 Features Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Freq

Datasheet: DH100P25B , DH100P25D , DH100P25E , DH100P25F , DH100P25I , DCCF040M65G2 , DCCF060M65G2 , DCCF080M120A2 , IRFP260 , DH025N03 , DH025N03B , DH025N03D , DH025N03E , DH025N03F , DH025N03I , DH025N04 , DH025N04B .

History: FQD17N08LTF | FQD17P06TF | P5506NK | IXFH56N30X3 | STB19NB20-1 | APT20M19JVR | IPL60R2K1C6S

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