DCCF160M120G1 Datasheet and Replacement
Type Designator: DCCF160M120G1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 54 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.196 Ohm
Package: TO247-4
DCCF160M120G1 substitution
DCCF160M120G1 Datasheet (PDF)
dcc160m120g1 dccf160m120g1.pdf

DCC160M120G1DCCF160M120G1 18A 1200V N-channel SIC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. 2 Features Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Freq
Datasheet: DH100P25B , DH100P25D , DH100P25E , DH100P25F , DH100P25I , DCCF040M65G2 , DCCF060M65G2 , DCCF080M120A2 , 8205A , DH025N03 , DH025N03B , DH025N03D , DH025N03E , DH025N03F , DH025N03I , DH025N04 , DH025N04B .
History: IRF540ZSPBF
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History: IRF540ZSPBF



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