DHB9Z24 PDF and Equivalents Search

 

DHB9Z24 PDF Specs and Replacement


   Type Designator: DHB9Z24
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 43 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 42 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: TO251
 

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DHB9Z24 PDF Specs

 ..1. Size:1095K  cn wxdh
 dh9z24 dhf9z24 dhi9z24 dhe9z24 dhb9z24 dhd9z24.pdf pdf_icon

DHB9Z24

DH9Z24/DHF9Z24/DHI9Z24 DHE9Z24/DHB9Z24/DHD9Z24 20A 60V P-channel Enhancement Mode Power MOSFET 1 Description These P-channel enhanced vdmosfets, used advanced V = -60V DSS trench technology and design, provide to excellent Rdson with low gate charge. Which accords with the R =58.5m DS(on) (TYP) RoHS standard. I = -20A D 2 Features Fast switching Low on resistance ... See More ⇒

Detailed specifications: DHS021N04D , DHS021N04E , DHS021N04P , DHS022N06 , DHS022N06E , DHB8290 , DHB90N03B17 , DHB90N045R , IRFB7545 , DHBSJ11N65 , DHBSJ13N65 , DHBSJ5N65 , DHBSJ7N65 , DHBZ24B31 , DHD015N06 , DHD035N04 , DHD100N03B13 .

History: APT58M80J

Keywords - DHB9Z24 MOSFET specs

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