All MOSFET. DHBZ24B31 Datasheet

 

DHBZ24B31 Datasheet and Replacement


   Type Designator: DHBZ24B31
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 68 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 92.9 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: TO251
 

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DHBZ24B31 Datasheet (PDF)

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DHBZ24B31

DHZ24B31/DHFZ24B31/DHIZ24B31/DHEZ24B31/DHBZ24B31/DHDZ24B3130A 60V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 60VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 24mDS(on) (TYP)standard.13 SI = 30AD2 Features Low on resist

Datasheet: DHB8290 , DHB90N03B17 , DHB90N045R , DHB9Z24 , DHBSJ11N65 , DHBSJ13N65 , DHBSJ5N65 , DHBSJ7N65 , 2N7002 , DHD015N06 , DHD035N04 , DHD100N03B13 , DHD16N06 , DHD3205A , DHD3N90 , DHD50N03 , DHF10H037R .

History: JBL102T

Keywords - DHBZ24B31 MOSFET datasheet

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