DHD015N06 Datasheet. Specs and Replacement

Type Designator: DHD015N06  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 88 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 190 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm

Package: TO252

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DHD015N06 datasheet

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DHD015N06

DHD015N06 60A 60V N-channel Enhancement Mode Power MOSFET 1 Description The N-channel enhanced vdmosfets used advanced trench 2 D V = 60V DSS technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. G R = 10.5m DS(on) (TYP) 1 3 S 2 Features I =60A D Fast switching Low on resistance(Rdson 15m ) Low gate charge(Typ ... See More ⇒

Detailed specifications: DHB90N03B17, DHB90N045R, DHB9Z24, DHBSJ11N65, DHBSJ13N65, DHBSJ5N65, DHBSJ7N65, DHBZ24B31, 75N75, DHD035N04, DHD100N03B13, DHD16N06, DHD3205A, DHD3N90, DHD50N03, DHF10H037R, DHF16N06

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