DHD015N06 PDF Specs and Replacement
Type Designator: DHD015N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 88 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 190 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: TO252
DHD015N06 substitution
DHD015N06 PDF Specs
dhd015n06.pdf
DHD015N06 60A 60V N-channel Enhancement Mode Power MOSFET 1 Description The N-channel enhanced vdmosfets used advanced trench 2 D V = 60V DSS technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. G R = 10.5m DS(on) (TYP) 1 3 S 2 Features I =60A D Fast switching Low on resistance(Rdson 15m ) Low gate charge(Typ ... See More ⇒
Detailed specifications: DHB90N03B17 , DHB90N045R , DHB9Z24 , DHBSJ11N65 , DHBSJ13N65 , DHBSJ5N65 , DHBSJ7N65 , DHBZ24B31 , AOD4184A , DHD035N04 , DHD100N03B13 , DHD16N06 , DHD3205A , DHD3N90 , DHD50N03 , DHF10H037R , DHF16N06 .
History: DHD16N06
Keywords - DHD015N06 MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: DHD16N06
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