All MOSFET. DHD015N06 Datasheet

 

DHD015N06 Datasheet and Replacement


   Type Designator: DHD015N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 88 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 45 nC
   trⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: TO252
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DHD015N06 Datasheet (PDF)

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DHD015N06

DHD015N0660A 60V N-channel Enhancement Mode Power MOSFET1 DescriptionThe N-channel enhanced vdmosfets used advanced trench2 DV = 60VDSStechnology design, provided excellent Rdson and low gatecharge. Which accords with the RoHS standard.GR = 10.5mDS(on) (TYP)13 S2 FeaturesI =60AD Fast switching Low on resistance(Rdson15m) Low gate charge(Typ:

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