DHD50N03 Datasheet. Specs and Replacement

Type Designator: DHD50N03  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 110 nS

Cossⓘ - Output Capacitance: 200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm

Package: TO252

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DHD50N03 substitution

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DHD50N03 datasheet

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 dhb50n03 dhd50n03.pdf pdf_icon

DHD50N03

DHB50N03/DHD50N03 50A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets used advanced 2 D V = 30V DSS trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. R = 6.0m DS(on) (TYP) G 1 2 Features I = 50A 3 S D Low switching loss Low on resistance Low gate charge Lo... See More ⇒

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DHD50N03

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Detailed specifications: DHBSJ7N65, DHBZ24B31, DHD015N06, DHD035N04, DHD100N03B13, DHD16N06, DHD3205A, DHD3N90, IRF3205, DHF10H037R, DHF16N06, DHF3205A, DHF3N90, DHF50N06FZC, DHF50N15, DHF80N08B22, DHF8290

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.