All MOSFET. DHF16N06 Datasheet

 

DHF16N06 Datasheet and Replacement


   Type Designator: DHF16N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 61 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 123 nS
   Cossⓘ - Output Capacitance: 607 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: TO220F
 

 DHF16N06 substitution

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DHF16N06 Datasheet (PDF)

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DHF16N06

DH16N06/DHF16N06/DHI16N06/DHE16N06/DHB16N06/DHD16N0661A 60V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel Enhanced VDMOSFETs Used by the2 DVDSS = 60Vself-aligned planar technology which reduce theconduction loss, improve switching performance andRDS = 16m(on) (TYP)Genhance the avalanche energy. Which accords with the1RoHS standard. ID = 61A3

Datasheet: DHD015N06 , DHD035N04 , DHD100N03B13 , DHD16N06 , DHD3205A , DHD3N90 , DHD50N03 , DHF10H037R , IRF740 , DHF3205A , DHF3N90 , DHF50N06FZC , DHF50N15 , DHF80N08B22 , DHF8290 , DHF85N08 , DHF90N045R .

History: STD7NM64N | AUIRFP4227 | IXTJ3N150 | VBZE04N03 | SSM3K56CT | AM90N06-04M2B | 2SK1928

Keywords - DHF16N06 MOSFET datasheet

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