DHF16N06 Datasheet and Replacement
Type Designator: DHF16N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 42 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 61 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 123 nS
Cossⓘ - Output Capacitance: 607 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: TO220F
DHF16N06 substitution
DHF16N06 Datasheet (PDF)
dh16n06 dhf16n06 dhi16n06 dhe16n06 dhb16n06 dhd16n06.pdf

DH16N06/DHF16N06/DHI16N06/DHE16N06/DHB16N06/DHD16N0661A 60V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel Enhanced VDMOSFETs Used by the2 DVDSS = 60Vself-aligned planar technology which reduce theconduction loss, improve switching performance andRDS = 16m(on) (TYP)Genhance the avalanche energy. Which accords with the1RoHS standard. ID = 61A3
Datasheet: DHD015N06 , DHD035N04 , DHD100N03B13 , DHD16N06 , DHD3205A , DHD3N90 , DHD50N03 , DHF10H037R , IRF740 , DHF3205A , DHF3N90 , DHF50N06FZC , DHF50N15 , DHF80N08B22 , DHF8290 , DHF85N08 , DHF90N045R .
History: AM7530C
Keywords - DHF16N06 MOSFET datasheet
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History: AM7530C



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