DHF16N06 Datasheet. Specs and Replacement
Type Designator: DHF16N06 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 42 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 61 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 123 nS
Cossⓘ - Output Capacitance: 607 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: TO220F
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DHF16N06 datasheet
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DH16N06/DHF16N06/DHI16N06/ DHE16N06/DHB16N06/DHD16N06 61A 60V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs Used by the 2 D VDSS = 60V self-aligned planar technology which reduce the conduction loss, improve switching performance and RDS = 16m (on) (TYP) G enhance the avalanche energy. Which accords with the 1 RoHS standard. ID = 61A 3... See More ⇒
Detailed specifications: DHD015N06, DHD035N04, DHD100N03B13, DHD16N06, DHD3205A, DHD3N90, DHD50N03, DHF10H037R, IRF840, DHF3205A, DHF3N90, DHF50N06FZC, DHF50N15, DHF80N08B22, DHF8290, DHF85N08, DHF90N045R
Keywords - DHF16N06 MOSFET specs
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History: FDS5351 | NDB6051 | IXFK120N25
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