DHF16N06 Datasheet. Specs and Replacement

Type Designator: DHF16N06  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 42 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 61 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 123 nS

Cossⓘ - Output Capacitance: 607 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm

Package: TO220F

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DHF16N06 datasheet

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DHF16N06

DH16N06/DHF16N06/DHI16N06/ DHE16N06/DHB16N06/DHD16N06 61A 60V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs Used by the 2 D VDSS = 60V self-aligned planar technology which reduce the conduction loss, improve switching performance and RDS = 16m (on) (TYP) G enhance the avalanche energy. Which accords with the 1 RoHS standard. ID = 61A 3... See More ⇒

Detailed specifications: DHD015N06, DHD035N04, DHD100N03B13, DHD16N06, DHD3205A, DHD3N90, DHD50N03, DHF10H037R, IRF840, DHF3205A, DHF3N90, DHF50N06FZC, DHF50N15, DHF80N08B22, DHF8290, DHF85N08, DHF90N045R

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