DHP50P04 Datasheet and Replacement
Type Designator: DHP50P04
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 28.9 nC
tr ⓘ - Rise Time: 43 nS
Cossⓘ - Output Capacitance: 269 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0145 Ohm
Package: DFN5X6-8L
DHP50P04 substitution
DHP50P04 Datasheet (PDF)
dhp50p04.pdf

DHP50P0450A 40V P-channel Enhancement Mode Power MOSFET1 DescriptionDHP50P04 is an P-channel enhancement mode powerfield-effect transistor. Used advanced trench technologyV = -40VDSSdesign, provided excellent Rdson and low gate charge.R = 12mDS(on) (TYP)The package form is SOP-8. Which accords with the RoHSstandard.I = -50AD2 Features Low on resistance Lo
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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