DHS008N04P Datasheet. Specs and Replacement

Type Designator: DHS008N04P  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 231 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15.3 nS

Cossⓘ - Output Capacitance: 2470 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.001 Ohm

Package: DFN5X6

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DHS008N04P datasheet

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DHS008N04P

DHS008N04P 100A 40V N-channel Enhancement Mode Power MOSFET 1 Description This N-channel enhancement mode power MOSFET V = 40V DSS utilizes advanced Split Gate Trench technology, which R = 0.83m DS(on) (TYP) provides excellent Rdson and low Gate charge at the same I = 300A Silicon limited D time. Which accords with the RoHS standard. Package I =100A limited D 2 Feat... See More ⇒

Detailed specifications: DHI9Z24, DHISJ11N65, DHISJ13N65, DHISJ17N65, DHIZ24B31, DHP035N04, DHP150N03, DHP50P04, SPP20N60C3, DHS010N04U, DHS015N06, DHS015N06E, DHS020N04, DHS020N04B, DH081N03E, DH081N03F, DH081N03I

Keywords - DHS008N04P MOSFET specs

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