All MOSFET. DHS008N04P Datasheet

 

DHS008N04P Datasheet and Replacement


   Type Designator: DHS008N04P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 231 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 15.3 nS
   Cossⓘ - Output Capacitance: 2470 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.001 Ohm
   Package: DFN5X6
 

 DHS008N04P substitution

   - MOSFET ⓘ Cross-Reference Search

 

DHS008N04P Datasheet (PDF)

 ..1. Size:828K  cn wxdh
 dhs008n04p.pdf pdf_icon

DHS008N04P

DHS008N04P100A 40V N-channel Enhancement Mode Power MOSFET1 DescriptionThis N-channel enhancement mode power MOSFETV = 40VDSSutilizes advanced Split Gate Trench technology, whichR = 0.83mDS(on) (TYP)provides excellent Rdson and low Gate charge at the sameI = 300ASilicon limitedDtime. Which accords with the RoHS standard.PackageI =100A limitedD2 Feat

Datasheet: DHI9Z24 , DHISJ11N65 , DHISJ13N65 , DHISJ17N65 , DHIZ24B31 , DHP035N04 , DHP150N03 , DHP50P04 , TK10A60D , DHS010N04U , DHS015N06 , DHS015N06E , DHS020N04 , DHS020N04B , DH081N03E , DH081N03F , DH081N03I .

Keywords - DHS008N04P MOSFET datasheet

 DHS008N04P cross reference
 DHS008N04P equivalent finder
 DHS008N04P lookup
 DHS008N04P substitution
 DHS008N04P replacement

 

 
Back to Top

 


 
.