All MOSFET. DHS008N04P Datasheet

 

DHS008N04P Datasheet and Replacement


   Type Designator: DHS008N04P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 231 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 85 nC
   tr ⓘ - Rise Time: 15.3 nS
   Cossⓘ - Output Capacitance: 2470 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.001 Ohm
   Package: DFN5X6
 

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DHS008N04P Datasheet (PDF)

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DHS008N04P

DHS008N04P100A 40V N-channel Enhancement Mode Power MOSFET1 DescriptionThis N-channel enhancement mode power MOSFETV = 40VDSSutilizes advanced Split Gate Trench technology, whichR = 0.83mDS(on) (TYP)provides excellent Rdson and low Gate charge at the sameI = 300ASilicon limitedDtime. Which accords with the RoHS standard.PackageI =100A limitedD2 Feat

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