DHS008N04P MOSFET Datasheet: N-Ch, 40V, 100A. Full specification with pinout and replacement list

DHS008N04P Specs and Replacement

   Type Designator: DHS008N04P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 231 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 15.3 nS
   Cossⓘ - Output Capacitance: 2470 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.001 Ohm
   Package: DFN5X6

DHS008N04P substitution

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DHS008N04P datasheet

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DHS008N04P 100A 40V N-channel Enhancement Mode Power MOSFET 1 Description This N-channel enhancement mode power MOSFET V = 40V DSS utilizes advanced Split Gate Trench technology, which R = 0.83m DS(on) (TYP) provides excellent Rdson and low Gate charge at the same I = 300A Silicon limited D time. Which accords with the RoHS standard. Package I =100A limited D 2 Feat... See More ⇒

Detailed specifications: DHI9Z24 , DHISJ11N65 , DHISJ13N65 , DHISJ17N65 , DHIZ24B31 , DHP035N04 , DHP150N03 , DHP50P04 , 13N50 , DHS010N04U , DHS015N06 , DHS015N06E , DHS020N04 , DHS020N04B , DH081N03E , DH081N03F , DH081N03I .