FQU5P20 MOSFET. Datasheet pdf. Equivalent
Type Designator: FQU5P20
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 45 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 3.7 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 10 nC
Maximum Drain-Source On-State Resistance (Rds): 1.4 Ohm
Package: TO251_IPAK
FQU5P20 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQU5P20 Datasheet (PDF)
1.1. fqd5p20 fqu5p20.pdf 
Size:657K _fairchild_semi
October 2008 QFET FQD5P20 / FQU5P20 200V P-Channel MOSFET Features General Description -3.7A, -200V, RDS(on) = 1.4? @VGS = -10 V These P-Channel enhancement mode power field effect Low gate charge ( typical 10 nC) transistors are produced using Fairchilds proprietary, Low Crss ( typical 12 pF) planar stripe, DMOS technology. Fast switching This advanced technology has been e
1.2. fqu5p20tu.pdf Size:657K _fairchild_semi
October 2008 QFET® FQD5P20 / FQU5P20 200V P-Channel MOSFET Features General Description • -3.7A, -200V, RDS(on) = 1.4Ω @VGS = -10 V These P-Channel enhancement mode power field effect • Low gate charge ( typical 10 nC) transistors are produced using Fairchild’s proprietary, • Low Crss ( typical 12 pF) planar stripe, DMOS technology. • Fast switching This advanced techn
5.1. fqd5p10 fqu5p10.pdf Size:705K _fairchild_semi
October 2008 QFET FQD5P10 / FQU5P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -3.6A, -100V, RDS(on) = 1.05? @VGS = -10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.3 nC) planar stripe, DMOS technology. Low Crss ( typical 18 pF) This advanced technology has been especially tailored
Datasheet: IRFP255 , IRFP260 , IRFP264 , IRFP330 , IRFP331 , IRFP332 , IRFP333 , IRFP340 , 2N5484 , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC .
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