FQU5P20 Datasheet. Specs and Replacement

Type Designator: FQU5P20  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: TO251 IPAK

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FQU5P20 substitution

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FQU5P20 datasheet

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 fqd5p20tf fqd5p20tm fqd5p20 fqu5p20 fqu5p20tu.pdf pdf_icon

FQU5P20

October 2008 QFET FQD5P20 / FQU5P20 200V P-Channel MOSFET Features General Description -3.7A, -200V, RDS(on) = 1.4 @VGS = -10 V These P-Channel enhancement mode power field effect Low gate charge ( typical 10 nC) transistors are produced using Fairchild s proprietary, Low Crss ( typical 12 pF) planar stripe, DMOS technology. Fast switching This advanced techn... See More ⇒

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 fqd5p10tf fqd5p10tm fqd5p10 fqu5p10.pdf pdf_icon

FQU5P20

October 2008 QFET FQD5P10 / FQU5P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -3.6A, -100V, RDS(on) = 1.05 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.3 nC) planar stripe, DMOS technology. Low Crss ( typical 18 pF) This advanced technology has been espec... See More ⇒

Detailed specifications: FDMC8030, FQU2N90TUAM002, FQU3N50C, FQU4N50TUWS, FQU5N40, FDMC7582, FQU5N60C, FDMQ8403, IRF630, FQU8P10, FQU9N25, HUF75542P3, HUF75631S3S, FDB86135, HUF75639S3, FDD86252, HUF75842P3

Keywords - FQU5P20 MOSFET specs

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