All MOSFET. FQU5P20 Datasheet

 

FQU5P20 Datasheet and Replacement


   Type Designator: FQU5P20
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO251 IPAK
 

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FQU5P20 Datasheet (PDF)

 ..1. Size:657K  fairchild semi
 fqd5p20tf fqd5p20tm fqd5p20 fqu5p20 fqu5p20tu.pdf pdf_icon

FQU5P20

October 2008QFETFQD5P20 / FQU5P20200V P-Channel MOSFETFeaturesGeneral Description -3.7A, -200V, RDS(on) = 1.4 @VGS = -10 VThese P-Channel enhancement mode power field effect Low gate charge ( typical 10 nC)transistors are produced using Fairchilds proprietary, Low Crss ( typical 12 pF)planar stripe, DMOS technology. Fast switchingThis advanced techn

 9.1. Size:705K  fairchild semi
 fqd5p10tf fqd5p10tm fqd5p10 fqu5p10.pdf pdf_icon

FQU5P20

October 2008QFETFQD5P10 / FQU5P10 100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -3.6A, -100V, RDS(on) = 1.05 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.3 nC)planar stripe, DMOS technology. Low Crss ( typical 18 pF)This advanced technology has been espec

Datasheet: FDMC8030 , FQU2N90TUAM002 , FQU3N50C , FQU4N50TUWS , FQU5N40 , FDMC7582 , FQU5N60C , FDMQ8403 , AON7408 , FQU8P10 , FQU9N25 , HUF75542P3 , HUF75631S3S , FDB86135 , HUF75639S3 , FDD86252 , HUF75842P3 .

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