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DSE108N20NA Spec and Replacement


   Type Designator: DSE108N20NA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 333 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 110 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 57 nC
   tr ⓘ - Rise Time: 72 nS
   Cossⓘ - Output Capacitance: 367 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: TO263

 DSE108N20NA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DSE108N20NA Specs

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DSE108N20NA

DSE108N20NA 200V/11m /110A N-MOSFET Features Key Parameters VDS AEC-Q101 qualified 200V RDS(on)typ. Low on resistance 11m ID Low reverse transfer capacitances 110A Ciss@10V 100% single pulse avalanche energy test 4260pF 100% VDS test Qgd 9nC Pb-Free plating / Halogen-Free / RoHS compliant Applications Power switching applications DC-DC conve... See More ⇒

Detailed specifications: DSE028N10N3 , DSE043N14N , DSE047N08N3 , DSE050N14N , DSE051N08N3 , DSE054N10N3 , DSE058N15NA , DSE065N10L3A , IRF1405 , DSE140N12N3 , DSE270N12N3 , DSG014N04N , DSG019N04L , DSG024N10N3 , DHS052N10D , DHS052N10E , DHS052N10F .

Keywords - DSE108N20NA MOSFET specs

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