DSE108N20NA Datasheet. Specs and Replacement

Type Designator: DSE108N20NA  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 333 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 110 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 72 nS

Cossⓘ - Output Capacitance: 367 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm

Package: TO263

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DSE108N20NA datasheet

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DSE108N20NA

DSE108N20NA 200V/11m /110A N-MOSFET Features Key Parameters VDS AEC-Q101 qualified 200V RDS(on)typ. Low on resistance 11m ID Low reverse transfer capacitances 110A Ciss@10V 100% single pulse avalanche energy test 4260pF 100% VDS test Qgd 9nC Pb-Free plating / Halogen-Free / RoHS compliant Applications Power switching applications DC-DC conve... See More ⇒

Detailed specifications: DSE028N10N3, DSE043N14N, DSE047N08N3, DSE050N14N, DSE051N08N3, DSE054N10N3, DSE058N15NA, DSE065N10L3A, IRL3713, DSE140N12N3, DSE270N12N3, DSG014N04N, DSG019N04L, DSG024N10N3, DHS052N10D, DHS052N10E, DHS052N10F

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs