F50N20 Datasheet and Replacement
Type Designator: F50N20
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 38.9 nS
Cossⓘ - Output Capacitance: 394 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.051 Ohm
Package: TO220F
F50N20 substitution
F50N20 Datasheet (PDF)
f50n20.pdf
F50N2050A 200V N-channel Enhancement Mode Power MOSFET1 DescriptionF50N20,the silicon N-channel enhanced vdmosfets, is2 DV = 200VDSSobtained by the self-aligned planar technology which reducethe conduction loss, improve switching performance andR = 42mDS(on) (TYP)Genhance the avalanche energy. Which accords with the1RoHS standard.I = 50A3 S D2 Features F
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , 7N65 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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