F50N20 Datasheet and Replacement
Type Designator: F50N20
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 38.9 nS
Cossⓘ - Output Capacitance: 394 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.051 Ohm
Package: TO220F
F50N20 substitution
F50N20 Datasheet (PDF)
f50n20.pdf
F50N2050A 200V N-channel Enhancement Mode Power MOSFET1 DescriptionF50N20,the silicon N-channel enhanced vdmosfets, is2 DV = 200VDSSobtained by the self-aligned planar technology which reducethe conduction loss, improve switching performance andR = 42mDS(on) (TYP)Genhance the avalanche energy. Which accords with the1RoHS standard.I = 50A3 S D2 Features F
Datasheet: DHSJ21N65Z , DHSJ25N65F , DSE012N04NA , DSE022N10N3 , F4N60 , F4N65 , F4N70 , F50N06 , IRFP250N , F5N65C , F5N80 , F630 , F640 , F6N90 , F740 , F7N60 , F7N70 .
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Keywords - F50N20 MOSFET datasheet
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History: IRFB7545
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