F50N20 Datasheet. Specs and Replacement

Type Designator: F50N20  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 38.9 nS

Cossⓘ - Output Capacitance: 394 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.051 Ohm

Package: TO220F

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F50N20 datasheet

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F50N20

F50N20 50A 200V N-channel Enhancement Mode Power MOSFET 1 Description F50N20,the silicon N-channel enhanced vdmosfets, is 2 D V = 200V DSS obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and R = 42m DS(on) (TYP) G enhance the avalanche energy. Which accords with the 1 RoHS standard. I = 50A 3 S D 2 Features F... See More ⇒

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F50N20

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F50N20

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Detailed specifications: DHSJ21N65Z, DHSJ25N65F, DSE012N04NA, DSE022N10N3, F4N60, F4N65, F4N70, F50N06, IRFB4115, F5N65C, F5N80, F630, F640, F6N90, F740, F7N60, F7N70

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