JMSH1101PE7 PDF and Equivalents Search

 

JMSH1101PE7 PDF Specs and Replacement


   Type Designator: JMSH1101PE7
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 313 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 110 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 303 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 43 nS
   Cossⓘ - Output Capacitance: 1572 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0016 Ohm
   Package: TO263
 

 JMSH1101PE7 substitution

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JMSH1101PE7 PDF Specs

 ..1. Size:1180K  jiejie micro
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JMSH1101PE7

110V, 303A, 1.3m N-channel Power SGT MOSFET JMSH1101PE7 Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 110 V 100% Vds Tested VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 303 A RDS(ON)_Typ(@VGS=10V 1.3 mW Applications Load Switch PWM Application Power Management Schematic D... See More ⇒

 4.1. Size:1252K  jiejie micro
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JMSH1101PE7

110V, 294A, 2.0m N-channel Power SGT MOSFET JMSH1101PE Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS TESTED VDSS 110 V 100% Vds TESTED VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 294 A Pb-free plating RDS(ON)_Typ(@VGS=10V 2.0 mW Applications Load Switch PWM Application Power Mana... See More ⇒

 5.1. Size:1254K  jiejie micro
jmsh1101pc.pdf pdf_icon

JMSH1101PE7

110V, 166A, 3.6m N-channel Power SGT MOSFET JMSH1101PC Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 110 V 100% Vds Tested VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 166 A RDS(ON)_Typ(@VGS=10V 3.6 mW Applications Load Switch PWM Application Power Management D G S TO... See More ⇒

 5.2. Size:1266K  jiejie micro
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JMSH1101PE7

110V, 256A, 1.6m N-channel Power SGT MOSFET JMSH1101PTL Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 110 V 100% Vds Tested VGS(th)_Typ 2.9 V Halogen-free; RoHS-compliant ID(@VGS=10V) 256 A Pb-free plating RDS(ON)_Typ(@VGS=10V 1.6 mW Applications Load Switch PWM Application Power Ma... See More ⇒

Detailed specifications: JMSH0801PTL , JMSH0802MC , JMSH0802ME , JMSH0802MTL , JMSH0802PE , JMSH0802PTL , JMSH1101PC , JMSH1101PE , IRFB3607 , JMSH1101PTL , JMSH1102QC , JMSH1102QE , JMSH1102QS , JMSH1102TC , JMSH1102TE , JMSH1102YC , JMSH1102YE .

Keywords - JMSH1101PE7 MOSFET specs

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