JMSH1003AE7Q MOSFET Datasheet: N-Ch, 100V, 196A. Full specification with pinout and replacement list

JMSH1003AE7Q Specs and Replacement

   Type Designator: JMSH1003AE7Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 283 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 196 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 37 nS
   Cossⓘ - Output Capacitance: 1361 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
   Package: TO263-7L

JMSH1003AE7Q substitution

- MOSFET ⓘ Cross-Reference Search

JMSH1003AE7Q datasheet

..1. Size:313K jiejie micro
jmsh1003ae7q.pdf pdf_icon

JMSH1003AE7Q 100V 2.8m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 2.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 196 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 2.8 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Application... See More ⇒

5.1. Size:381K jiejie micro
jmsh1003atlq.pdf pdf_icon

JMSH1003ATLQ 100V 2.7m TOLL N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (2) 228 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 2.7 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Ap... See More ⇒

5.2. Size:327K jiejie micro
jmsh1003agq.pdf pdf_icon

JMSH1003AGQ 100V 2.8m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 2.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 170 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 2.8 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications... See More ⇒

5.3. Size:380K jiejie micro
jmsh1003atl.pdf pdf_icon

JMSH1003ATL 100V 2.7m TOLL N-Ch Power MOSFET Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameter Value Unit VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (2) 228 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 2.7 m Halogen-free and RoHS-compliant Applications Power Management in Compu... See More ⇒