All MOSFET. JMH65R430ACFP Datasheet

 

JMH65R430ACFP Datasheet and Replacement


   Type Designator: JMH65R430ACFP
   Marking Code: H65R430A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 11.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 18.4 nC
   tr ⓘ - Rise Time: 16.8 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.43 Ohm
   Package: TO220F
 

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JMH65R430ACFP Datasheet (PDF)

 ..1. Size:341K  jiejie micro
 jmh65r430acfp.pdf pdf_icon

JMH65R430ACFP

JMH65R430ACFP650V SuperJunction Power MOSFETFeatures Product SummaryParameter Value Unit Extremely Low Gate Charge VDS650 V Excellent Output Capacitance (Coss) Profile VGS(th)_Typ3.5 V Fast Switching Capability ID (@ VGS = 10V) (1) 11.2 A 100% UIS Tested, 100% Rg Tested RDS(ON)_Typ (@ VGS = 10V)364 m Eoss@400V2.2 J Pb-free Lead Plating H

 4.1. Size:350K  jiejie micro
 jmh65r430af.pdf pdf_icon

JMH65R430ACFP

JMH65R430AF650V SuperJunction Power MOSFETFeatures Product SummaryParameter Value Unit Extremely Low Gate Charge VDS650 V Excellent Output Capacitance (Coss) Profile VGS(th)_Typ3.5 V Fast Switching Capability ID (@ VGS = 10V) (1) 11.2 A 100% UIS Tested, 100% Rg Tested RDS(ON)_Typ (@ VGS = 10V)364 m Eoss@400V2.2 J Pb-free Lead Plating Hal

 4.2. Size:359K  jiejie micro
 jmh65r430akq.pdf pdf_icon

JMH65R430ACFP

JMH65R430AKQ650V SuperJunction Power MOSFETFeatures Product SummaryParameter Value Unit Extremely Low Gate Charge VDS650 V Excellent Output Capacitance (Coss) Profile VGS(th)_Typ3.5 V Fast Switching Capability ID (@ VGS = 10V) (1) 11.2 A Ultra Fast Body Diode RDS(ON)_Typ (@ VGS = 10V)370 m Eoss@400V2.2 J 100% UIS Tested, 100% Rg Tested P

 4.3. Size:348K  jiejie micro
 jmh65r430apln.pdf pdf_icon

JMH65R430ACFP

JMH65R430APLN650V SuperJunction Power MOSFETFeatures Product SummaryParameter Value Unit Extremely Low Gate Charge VDS650 V Excellent Output Capacitance (Coss) Profile VGS(th)_Typ3.5 V Fast Switching Capability ID (@ VGS = 10V) (1) 10.4 A 100% UIS Tested, 100% Rg Tested RDS(ON)_Typ (@ VGS = 10V)370 m Eoss@400V2.2 J Pb-free Lead Plating H

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Keywords - JMH65R430ACFP MOSFET datasheet

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