JMSH1018PGQ MOSFET Datasheet: N-Ch, 100V, 52A. Full specification with pinout and replacement list

JMSH1018PGQ Specs and Replacement

   Type Designator: JMSH1018PGQ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 107 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 52 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 383 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0197 Ohm
   Package: PDFN5X6-8L

JMSH1018PGQ substitution

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JMSH1018PGQ datasheet

..1. Size:1188K jiejie micro
jmsh1018pgq.pdf pdf_icon

100V, 52A, 15.2m N-channel Power SGT MOSFET JMSH1018PGQ Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate Charge VDSS 100 V 100% UIS Tested VGS(th)_Typ 3.0 V 100% Vds Tested ID(@VGS=10V) 52 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V) 15.2 mW AEC-Q101 Qualified Applications Load Switch PWM Appli... See More ⇒

4.1. Size:837K jiejie micro
jmsh1018pg.pdf pdf_icon

JMSH1018PG 100V 15.7mW N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) Ultra-low RDS(ON) VDS 100 V Low Gate Charge Low Gate Charge VGS(th)_Typ 3.1 V 100% UIS Tested, 100% RggTested 100% UIS Tested, 100% R Tested ID (@ VGS = 10V) (1) 55 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 15.... See More ⇒

4.2. Size:1314K jiejie micro
jmsh1018pgd.pdf pdf_icon

100V, 26A, 17m N-channel Power SGT MOSFET JMSH1018PGD Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 26 A RDS(ON)_Typ(@VGS=10V 17 mW Applications Load Switch PWM Application Power Management PDFN5X6-8L-D S... See More ⇒

5.1. Size:637K jiejie micro
jmsh1018pk.pdf pdf_icon

JMSH1018PK 100V 15.7mW N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) Ultra-low RDS(ON) VDS 100 V Low Gate Charge Low Gate Charge VGS(th)_Typ 3.1 V 100% UIS Tested, 100% RggTested 100% UIS Tested, 100% R Tested ID (@ VGS = 10V) (1) 40 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 15.... See More ⇒