JMPC4N60BJ Datasheet and Replacement
Type Designator: JMPC4N60BJ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 66 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 17.7 nS
Cossⓘ - Output Capacitance: 61 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.52 Ohm
Package: TO220
JMPC4N60BJ substitution
JMPC4N60BJ Datasheet (PDF)
jmpc4n60bj.pdf
JMPC4N60BJDescriptionJMP N-channel Enhancement Mode Power MOSFETFeaturesApplications 600V, 4A Load SwitchRDS(ON)
jmpc4n65bj.pdf
JMPC4N65BJDescriptionJMP N-channel Enhancement Mode Power MOSFETFeaturesApplications 650V, 4A Load SwitchRDS(ON)
Datasheet: JMSH1018PK , JMSH1018PP , JMH65R430AE , JMH65R430AF , JMH65R430AK , JMH65R430AKQ , JMH65R430APLN , JMPC34N20BJ , 2SK3568 , JMPC4N65BJ , JMPC52N20BJ , JMPC5N50BJ , JMPC630BJ , JMPC7N65BJ , JMPC840BJ , JMPC8N60BJ , JMSH1004AC .
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