JMPC52N20BJ Datasheet and Replacement
Type Designator: JMPC52N20BJ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 208 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 52 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 120 nS
Cossⓘ - Output Capacitance: 207 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.064 Ohm
Package: TO220
JMPC52N20BJ substitution
JMPC52N20BJ Datasheet (PDF)
jmpc52n20bj.pdf
200V, 52A, 49m N-channel Power Planar MOSFETJMPC52N20BJProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 200 V 100% Vds TestedVGS(th)_Typ 2.8 V Halogen-free; RoHS-compliantID(@VGS=10V) 52 ARDS(ON)_Typ(@VGS=10V 49 mWApplications Load Switch PWM Application Power ManagementDG STO
jmpc5n50bj.pdf
JMPC5N50BJDescriptionJMP N-channel Enhancement Mode Power MOSFETFeaturesApplications 500V, 5A Load SwitchRDS(ON)
Datasheet: JMH65R430AE , JMH65R430AF , JMH65R430AK , JMH65R430AKQ , JMH65R430APLN , JMPC34N20BJ , JMPC4N60BJ , JMPC4N65BJ , P0903BDG , JMPC5N50BJ , JMPC630BJ , JMPC7N65BJ , JMPC840BJ , JMPC8N60BJ , JMSH1004AC , JMSH1004AE , JMSH1004AEQ .
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