JMPC52N20BJ Datasheet. Specs and Replacement

Type Designator: JMPC52N20BJ  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 208 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 52 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 120 nS

Cossⓘ - Output Capacitance: 207 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.064 Ohm

Package: TO220

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JMPC52N20BJ datasheet

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JMPC52N20BJ

200V, 52A, 49m N-channel Power Planar MOSFET JMPC52N20BJ Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 200 V 100% Vds Tested VGS(th)_Typ 2.8 V Halogen-free; RoHS-compliant ID(@VGS=10V) 52 A RDS(ON)_Typ(@VGS=10V 49 mW Applications Load Switch PWM Application Power Management D G S TO... See More ⇒

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JMPC52N20BJ

JMPC5N50BJ Description JMP N-channel Enhancement Mode Power MOSFET Features Applications 500V, 5A Load Switch RDS(ON) ... See More ⇒

Detailed specifications: JMH65R430AE, JMH65R430AF, JMH65R430AK, JMH65R430AKQ, JMH65R430APLN, JMPC34N20BJ, JMPC4N60BJ, JMPC4N65BJ, 10N65, JMPC5N50BJ, JMPC630BJ, JMPC7N65BJ, JMPC840BJ, JMPC8N60BJ, JMSH1004AC, JMSH1004AE, JMSH1004AEQ

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